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- Publisher Website: 10.1109/EDSSC.2018.8487159
- Scopus: eid_2-s2.0-85056298302
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Conference Paper: Improved Performance of Pentacene OTFT by using Hybrid Oxide of Nd and Hf as Gate Dielectric
| Title | Improved Performance of Pentacene OTFT by using Hybrid Oxide of Nd and Hf as Gate Dielectric |
|---|---|
| Authors | |
| Keywords | high-k NdHfON dielectric Organic thin-film transistor |
| Issue Date | 2018 |
| Publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853 |
| Citation | Proceedings of 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC), Shenzhen, China, -8 June 2018 How to Cite? |
| Abstract | Pentacene organic thin-film transistors (OTFTs) adopting high-k NdON, HfON and NdHfON as gate dielectrics are fabricated. Their electrical and physical characteristics are compared. With appropriate Nd/Hf ratio in the dielectric, the OTFT with NdHfON gate dielectric can achieve improved performance such as a carrier mobility of 1.1 cm 2 /V·s and a small threshold voltage of -1.20 V. The AFM results of the pentacene layer and the dielectric layer reveal that both improved dielectric and pentacene morphologies lead to the higher carrier mobility of the device. |
| Persistent Identifier | http://hdl.handle.net/10722/261958 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ma, Y | - |
| dc.contributor.author | Tang, WM | - |
| dc.contributor.author | Lai, PT | - |
| dc.date.accessioned | 2018-09-28T04:50:58Z | - |
| dc.date.available | 2018-09-28T04:50:58Z | - |
| dc.date.issued | 2018 | - |
| dc.identifier.citation | Proceedings of 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC), Shenzhen, China, -8 June 2018 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/261958 | - |
| dc.description.abstract | Pentacene organic thin-film transistors (OTFTs) adopting high-k NdON, HfON and NdHfON as gate dielectrics are fabricated. Their electrical and physical characteristics are compared. With appropriate Nd/Hf ratio in the dielectric, the OTFT with NdHfON gate dielectric can achieve improved performance such as a carrier mobility of 1.1 cm 2 /V·s and a small threshold voltage of -1.20 V. The AFM results of the pentacene layer and the dielectric layer reveal that both improved dielectric and pentacene morphologies lead to the higher carrier mobility of the device. | - |
| dc.language | eng | - |
| dc.publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853 | - |
| dc.relation.ispartof | IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) | - |
| dc.rights | IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). Copyright © IEEE. | - |
| dc.subject | high-k | - |
| dc.subject | NdHfON dielectric | - |
| dc.subject | Organic thin-film transistor | - |
| dc.title | Improved Performance of Pentacene OTFT by using Hybrid Oxide of Nd and Hf as Gate Dielectric | - |
| dc.type | Conference_Paper | - |
| dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
| dc.identifier.authority | Lai, PT=rp00130 | - |
| dc.identifier.doi | 10.1109/EDSSC.2018.8487159 | - |
| dc.identifier.scopus | eid_2-s2.0-85056298302 | - |
| dc.identifier.hkuros | 292234 | - |
| dc.publisher.place | United States | - |