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Title | Author(s) | Issue Date | |
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Unstrained, modulation-doped, In 0.3Ga 0.7As/In 0.29Al 0.71As field-effect transistor grown on GaAs substrate Journal:IEEE Electron Device Letters | 1992 |
Title | Author(s) | Issue Date | |
---|---|---|---|
Unstrained, modulation-doped, In 0.3Ga 0.7As/In 0.29Al 0.71As field-effect transistor grown on GaAs substrate Journal:IEEE Electron Device Letters | 1992 |