Showing results 1 to 7 of 7
Title | Author(s) | Issue Date | |
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Arsenic doping kinetics in silicon during gas source molecular beam epitaxy Journal:Surface Science | 1998 | ||
Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grovvn by gas source molecular beam epitaxy Journal:Materials Science and Technology | 1995 | ||
Arsenic surface segregation and incorporation in Si and Si1-xGex during gas source molecular beam epitaxy Journal:Journal of Crystal Growth | 1997 | ||
Characterization of n-channel Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy Journal:Semiconductor Science and Technology | 1995 | ||
Growth and characterization of Si/SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxy Journal:Journal of Crystal Growth | 1995 | ||
1996 | |||
Unstrained, modulation-doped, In 0.3Ga 0.7As/In 0.29Al 0.71As field-effect transistor grown on GaAs substrate Journal:IEEE Electron Device Letters | 1992 |