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Title	Author(s)	Issue Date	Views
Ab initio study of indium quantum wire formation on flat and stepped Si(100) surfaces Journal:Surface Review and Letters	Dai, XQI WeiWei, JU Xie, MH Tong, SY	2005	196
Adsorption and desorption kinetics of gallium atoms on 6H-SiC(0001) surfaces Journal:Physical Review B (Condensed Matter)	Zheng, LX Xie, MH Tong, SY	2000	207
Anisotropic step-flow growth and island growth of GaN(0001) by molecular beam epitaxy Journal:Physical Review Letters	Xie, MH Seutter, SM Zhu, WK Zheng, LX Wu, H Tong, SY	1999	207
Antibacterial and photocatalytic activity of TiO2 and ZnO nanomaterials in phosphate buffer and saline solution Journal:Applied Microbiology and Biotechnology	Ng, AMC Chan, CMN Guo, MY Leung, YH Djurišić, AB Hu, X Chan, WK Leung, FCC Tong, SY	2013	86
Atomic design of polarity of GaN films grown on SiC(0001) Journal:Communications in Theoretical Physics	Dai, XQ Wu, HS Xu, SH Xie, MH Tong, SY	2004	257
Avoiding Sabatier’s conflict in bifunctional heterogeneous catalysts for the WGS reaction Journal:Chem	Tian, H HE, Y Zhao, Q Li, J Shao, X Zhang, Z Huang, X Lu, C Wang, K Jiang, Q Ng, AMC Xu, H Tong, SY	2021	24
Coherent and dislocated three-dimensional islands of Inx Ga1-x N self-assembled on GaN(0001) during molecular-beam epitaxy Journal:Physical Review B (Condensed Matter and Materials Physics)	Liu, Y Cao, YG Wu, HS Xie, MH Tong, SY	2005	119
Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers Journal:Applied Physics Letters	Xu, SJ Zheng, LX Cheung, SH Xie, MH Tong, SY Yang, H	2002	169
Convergent N2-scaling iterative method of photoelectron diffraction and low-energy electron diffraction for ordered or disordered systems Journal:Physical Review B (Condensed Matter)	Wu, H Tong, SY	1999	143
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy Journal:Journal of Crystal Growth	Zheng, LX Xie, MH Xu, SJ Cheung, SH Tong, SY	2001	157
Direct inversion of low-energy electron diffraction (LEED) IV spectra: The surface Patterson function Journal:Journal of Physics Condensed Matter	Tong, SY Wu, H	2002	171
Direct observation of a Ga adlayer on a GaN(0001) surface by LEED Patterson inversion Journal:Physical Review B (Condensed Matter)	Xu, SH Wu, H Dai, XQ Lau, WP Zheng, LX Xie, MH Tong, SY	2003	121
Evidence for a Type-II band alignment between cubic and hexagonal phases of GaN Journal:Applied Physics Letters	Lu, XH Yu, PY Zheng, LX Xu, SJ Xie, MH Tong, SY	2003	167
Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates Journal:International Journal of Modern Physics B	Xie, MH Cheung, SH Zheng, LX Tong, SY Zhang, BS Yang, H	2002	231
Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy Journal:Applied Physics Letters	Ng, YF Cao, YG Xie, MH Wang, XL Tong, SY	2002	182
Growth of triangular ZnO nanorods by electrodeposition Journal:Journal of the Electrochemical Society	Chen, XY Fang, F Ng, AMC Djurišić, AB Tong, SY	2010	144
High-risk prostate cancer: what can we expect after prostatectomy? Proceeding/Conference:BJU International	Yuen, SKK Chiu, PK Tong, SY Hou, SM Yiu, MK Ng, CF	2016	42
In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy Journal:Physical Review B (Condensed Matter and Materials Physics)	Cao, YG Xu, SH Lü, W Dai, XQ Chan, YF Wang, N Liu, Y Wu, HS Xie, MH Tong, SY	2005	157
Initial stage of GaN growth and its implication to defect formation in films Journal:Physical Review B (Condensed Matter)	Cheung, SH Zheng, LX Xie, MH Tong, SY Ohtani, N	2001	105
InN Island shape and its dependence on growth condition of molecular-beam epitaxy Journal:Applied Physics Letters	Cao, YG Xie, MH Liu, Y Ng, YF Wu, HS Tong, SY	2003	183

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