Showing results 1 to 3 of 3
Title | Author(s) | Issue Date | Views | |
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3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices Proceeding/Conference:2012 15th International Workshop on Computational Electronics, IWCE 2012 | 2012 | 49 | ||
Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D atomistic simulation Proceeding/Conference:European Solid-State Device Research Conference | 2012 | 38 | ||
Impact of statistical variability and 3D electrostatics on post-cycling anomalous charge loss in nanoscale Flash memories Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings | 2013 | 55 |