Showing results 19 to 21 of 21
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Title | Author(s) | Issue Date | Views | |
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CCl4-doped semi-insulating InP as a buffer layer in GaInAs/InP high electron mobility transistors Journal:Applied Physics Letters | 1996 | 140 | ||
1997 | 99 | |||
Carbon-doped GaInP/GaAs double heterostructure-emitter bipolar transistors with high current gain Journal:IEEE Transactions on Electron Devices | 1995 | 160 |