| Title | Author(s) | Year | View Count |
 | Ordered versus random nucleation of InN islands grown by molecular beam epitaxy | Zheng, H; Xie, MH; Xue, QK | 2012 | 141 |
 | Interplay between topological insulators and superconductors | Wang, J; Chang, CZ; Li, H; He, K; Zhang, D; Singh, M; Ma, XC; Samarth, N; Xie, M; Xue, QK; Chan, MHW | 2012 | 182 |
| Crossover of the three-dimensional topological insulator Bi2 Se3 to the two-dimensional limit | Zhang, Y; He, K; Chang, CZ; Song, CL; Wang, LL; Chen, X; Jia, JF; Fang, Z; Dai, X; Shan, WY; Shen, SQ; Niu, Q; Qi, XL; Zhang, SC; Ma, XC; Xue, QK | 2010 | 46 |
| Erratum: Crossover of the three-dimensional topological insulator Bi 2Se3 to the two-dimensional limit (Nature Physics (2010) 6 (584-588)) | Zhang, Y; He, K; Chang, CZ; Song, CL; Wang, LL; Chen, X; Jia, JF; Fang, Z; Dai, X; Shan, WY; Shen, SQ; Niu, Q; Qi, XL; Zhang, SC; Ma, XC; Xue, QK | 2010 | 26 |
| Surface modification for epitaxial growth of single crystalline cobalt thin films with uniaxial magnetic anisotropy on GaN(0001)-1 × 1 surfaces | Li, HD; He, K; Xie, MH; Wang, N; Jia, JF; Xue, QK | 2010 | 215 |
| Kinetic energy barriers on the GaN(0001) surface: A nucleation study by scanning tunneling microscopy | Zheng, H; Xie, MH; Wu, HS; Xue, QK | 2008 | 187 |
| Wetting of GaN islands by excess Ga: Origin of different appearances of GaN islands in scanning tunneling microscopy | Zheng, H; Xie, MH; Wu, HS; Xue, QK | 2007 | 135 |
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