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Article: Wetting of GaN islands by excess Ga: Origin of different appearances of GaN islands in scanning tunneling microscopy

TitleWetting of GaN islands by excess Ga: Origin of different appearances of GaN islands in scanning tunneling microscopy
Authors
Issue Date2007
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 2007, v. 75 n. 20 How to Cite?
AbstractWe observe three different kinds of islands, namely the "bare," "ghost," and "normal" islands, by scanning tunneling microscopy of GaN(0001) prepared under Ga-rich conditions with different excess Ga coverage. They correlate to three different growth regimes. The various morphologies of the islands are suggested to be due to different states of wetting of the surface by excess Ga. The dynamical behavior of the wetting process is followed, and an island size dependence of Ga wetting is noted. © 2007 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/80398
ISSN
2014 Impact Factor: 3.736
2015 SCImago Journal Rankings: 1.933
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorZheng, Hen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorWu, HSen_HK
dc.contributor.authorXue, QKen_HK
dc.date.accessioned2010-09-06T08:06:01Z-
dc.date.available2010-09-06T08:06:01Z-
dc.date.issued2007en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2007, v. 75 n. 20en_HK
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80398-
dc.description.abstractWe observe three different kinds of islands, namely the "bare," "ghost," and "normal" islands, by scanning tunneling microscopy of GaN(0001) prepared under Ga-rich conditions with different excess Ga coverage. They correlate to three different growth regimes. The various morphologies of the islands are suggested to be due to different states of wetting of the surface by excess Ga. The dynamical behavior of the wetting process is followed, and an island size dependence of Ga wetting is noted. © 2007 The American Physical Society.en_HK
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society.en_HK
dc.titleWetting of GaN islands by excess Ga: Origin of different appearances of GaN islands in scanning tunneling microscopyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=75&spage=205310:1&epage=5&date=2007&atitle=Wetting+of+GaN+islands+by+excess+Ga:+Origin+of+different+appearances+of+GaN+islands+in+scanning+tunneling+microscopyen_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.emailWu, HS: hswu@hkucc.hku.hken_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.identifier.authorityWu, HS=rp00813en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1103/PhysRevB.75.205310en_HK
dc.identifier.scopuseid_2-s2.0-34347355395en_HK
dc.identifier.hkuros126882en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34347355395&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume75en_HK
dc.identifier.issue20en_HK
dc.identifier.isiWOS:000246890900067-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZheng, H=7403441344en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridWu, HS=7405584367en_HK
dc.identifier.scopusauthoridXue, QK=7201986973en_HK

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