Article: Interplay between topological insulators and superconductors

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TitleInterplay between topological insulators and superconductors
AuthorsWang, J2 5
Chang, CZ4 6
Li, H1 3
He, K4
Zhang, D2
Singh, M2
Ma, XC4
Samarth, N2
Xie, M1
Xue, QK4 6
Chan, MHW2
Issue Date2012
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
CitationPhysical Review B - Condensed Matter And Materials Physics, 2012, v. 85 n. 4 [How to Cite?]
DOI: http://dx.doi.org/10.1103/PhysRevB.85.045415
AbstractTopological insulators are insulating in the bulk but possess metallic surface states protected by time-reversal symmetry. Here, we report on a detailed electronic transport study in high-quality Bi 2Se 3 topological insulator thin films contacted by superconducting (In, Al, and W) electrodes. The resistance of the film shows an abrupt and significant upturn when the electrodes become superconducting. In turn, the Bi 2Se 3 film greatly weakens the superconductivity of the electrodes, significantly reducing both their transition temperatures and their critical fields. A possible interpretation of these results is that the superconducting electrodes are accessing the surface states and the experimental results are consequences of the interplay between the Cooper pairs of the electrodes and the spin-polarized current of the surface states in Bi 2Se 3. © 2012 American Physical Society.
ISSN1098-0121
2011 Impact Factor: 3.691
2011 SCImago Journal Rankings: 0.268
DOIhttp://dx.doi.org/10.1103/PhysRevB.85.045415
ReferencesReferences in Scopus
DC Field
Value
dc.contributor.authorWang, J
dc.contributor.authorChang, CZ
dc.contributor.authorLi, H
dc.contributor.authorHe, K
dc.contributor.authorZhang, D
dc.contributor.authorSingh, M
dc.contributor.authorMa, XC
dc.contributor.authorSamarth, N
dc.contributor.authorXie, M
dc.contributor.authorXue, QK
dc.contributor.authorChan, MHW
dc.date.accessioned2012-02-03T06:14:14Z
dc.date.available2012-02-03T06:14:14Z
dc.date.issued2012
dc.description.abstractTopological insulators are insulating in the bulk but possess metallic surface states protected by time-reversal symmetry. Here, we report on a detailed electronic transport study in high-quality Bi 2Se 3 topological insulator thin films contacted by superconducting (In, Al, and W) electrodes. The resistance of the film shows an abrupt and significant upturn when the electrodes become superconducting. In turn, the Bi 2Se 3 film greatly weakens the superconductivity of the electrodes, significantly reducing both their transition temperatures and their critical fields. A possible interpretation of these results is that the superconducting electrodes are accessing the surface states and the experimental results are consequences of the interplay between the Cooper pairs of the electrodes and the spin-polarized current of the surface states in Bi 2Se 3. © 2012 American Physical Society.
dc.description.naturepublished_or_final_version
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2012, v. 85 n. 4 [How to Cite?]
DOI: http://dx.doi.org/10.1103/PhysRevB.85.045415
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevB.85.045415
dc.identifier.epage045415-7
dc.identifier.hkuros198604
dc.identifier.isiWOS:000298987700002
Funding AgencyGrant Number
Pennsylvania State University Materials Research Science and Engineering Center under US National Science FoundationDMR-0820404
National Basic Research Program of China2012CB921300
Research Grant Council of the Hong Kong Special Administrative RegionHKU 7061/10P
HKU 10/CRF/08
(Chinese) National Science Foundation
Ministry of Science and Technology of China
National Natural Science Foundation of China11174007
Funding Information:

This work was supported by the Pennsylvania State University Materials Research Science and Engineering Center under US National Science Foundation Grant No. DMR-0820404, the National Basic Research Program of China (Grant No. 2012CB921300), the General Research Fund (Grant No. HKU 7061/10P) and Collaborative Research Fund (Grant No. HKU 10/CRF/08) from the Research Grant Council of the Hong Kong Special Administrative Region, the (Chinese) National Science Foundation, the Ministry of Science and Technology of China, the National Natural Science Foundation of China (Grant No. 11174007). We are grateful to J. Jain, X. Qi, S. Zhang, L. Fu, C. Liu, Y. Ran, and M. Tian for illuminating discussions.

dc.identifier.issn1098-0121
2011 Impact Factor: 3.691
2011 SCImago Journal Rankings: 0.268
dc.identifier.issue4
dc.identifier.scopuseid_2-s2.0-84863011627
dc.identifier.spage045415-1
dc.identifier.urihttp://hdl.handle.net/10722/144568
dc.identifier.volume85
dc.languageeng
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
dc.publisher.placeUnited States
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physics
dc.relation.referencesReferences in Scopus
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society.
dc.titleInterplay between topological insulators and superconductors
dc.typeArticle
Author Affiliations
  1. The University of Hong Kong
  2. Pennsylvania State University
  3. University of Electronic Science and Technology of China
  4. Chinese Academy of Sciences
  5. Peking University
  6. Tsinghua University