Showing results 1 to 3 of 3
Title | Author(s) | Issue Date | |
---|---|---|---|
Direct tunnelling gate leakage variability in Nano-CMOS transistors Journal:IEEE Transactions on Electron Devices | 2010 | ||
Si-SiO 2 interface band-gap transition - Effects on MOS inversion layer Proceeding/Conference:Physica Status Solidi (A) Applications and Materials Science | 2008 | ||
Three-dimensional statistical simulation of gate leakage fluctuations due to combined interface roughness and random dopants Journal:Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007 |