Showing results 1 to 5 of 5
Title | Author(s) | Issue Date | |
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Bias-stress-induced instability of polymer thin-film transistor based on poly(3-hexylthiophene) Journal:IEEE Transactions on Device and Materials Reliability | 2012 | ||
Indium–gallium–zinc–oxide thin-film transistor with a planar split dual-gate structure Journal:Modern Physics Letters B | 2017 | ||
Influence of octadecyltrichlorosilane surface modification on electrical properties of polymer thin-film transistors studied by capacitancevoltage analysis Journal:IEEE Transactions on Device and Materials Reliability | 2011 | ||
Low-operating-voltage polymer thin-film transistors based on poly(3-hexylthiophene) with hafnium oxide as the gate dielectric Journal:IEEE Transactions on Device and Materials Reliability | 2010 | ||
Temperature dependence of the electrical characteristics of ZnO thin film transistor with high-k NbLaO gate dielectric Journal:Journal of Vacuum Science and Technology: Part B Nanotechnology & Microelectronics | 2021 |