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Article: Low-operating-voltage polymer thin-film transistors based on poly(3-hexylthiophene) with hafnium oxide as the gate dielectric

TitleLow-operating-voltage polymer thin-film transistors based on poly(3-hexylthiophene) with hafnium oxide as the gate dielectric
Authors
KeywordsCapacitance-Voltage characteristics
High-κ
Poly(3-hexylthiophene) (P3HT)
Polymer thin-film transistor (PTFT)
Issue Date2010
PublisherIEEE.
Citation
Ieee Transactions On Device And Materials Reliability, 2010, v. 10 n. 2, p. 233-237 How to Cite?
AbstractThe effects of hafnium oxide $(hbox{HfO}-{2})$ gate dielectric annealing treatment in oxygen $(hbox{O}-{2})$ and ammonia $(hbox{NH}-{3})$ ambient on the electrical performance of polymer thin-film transistors (PTFTs) based on poly(3-hexylthiophene) are investigated. The PTFTs with $hbox{HfO}-{2}$ gate dielectric and also octadecyltrichlorosilane surface modification, prepared by spin-coating process, exhibit good performance, such as a small threshold voltage of $-$0.5 V and an operating voltage as low as $-$4 V. Results indicate that the PTFT with $hbox{NH}-{3}$-annealed $ hbox{HfO}-{2}$ shows higher carrier mobility, larger on/off current ratio, smaller subthreshold swing, and lower threshold voltage than the PTFT with $hbox{O}-{2}$-annealed $ hbox{HfO}-{2}$. Capacitancevoltage analysis for metal-polymer-oxide-silicon structures indicates that the better electrical performance of the PTFT with $hbox{NH}-{3}$ -annealed $hbox{HfO}-{2}$ is attributed to improved dielectric/polymer interface and reduced series resistance in the transistor. © 2006 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/124709
ISSN
2015 Impact Factor: 1.437
2015 SCImago Journal Rankings: 0.826
ISI Accession Number ID
Funding AgencyGrant Number
Natural Science Foundation of Guangdong province8451064101000257
RGC of HKSAR, ChinaHKU 7133/07E
URC for Seed Fund for Strategic Research Theme of HKU on Molecular Materials
Funding Information:

Manuscript received November 19, 2009; revised January 6, 2010; accepted January 24, 2010. Date of publication February 5, 2010; date of current version June 4, 2010. This work was supported in part by the Natural Science Foundation of Guangdong province (Project 8451064101000257), by the RGC of HKSAR, China (Project HKU 7133/07E), and by the URC for Seed Fund for Strategic Research Theme of HKU on Molecular Materials.

References

 

DC FieldValueLanguage
dc.contributor.authorLiu, YRen_HK
dc.contributor.authorDeng, LFen_HK
dc.contributor.authorYao, RHen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2010-10-31T10:49:43Z-
dc.date.available2010-10-31T10:49:43Z-
dc.date.issued2010en_HK
dc.identifier.citationIeee Transactions On Device And Materials Reliability, 2010, v. 10 n. 2, p. 233-237en_HK
dc.identifier.issn1530-4388en_HK
dc.identifier.urihttp://hdl.handle.net/10722/124709-
dc.description.abstractThe effects of hafnium oxide $(hbox{HfO}-{2})$ gate dielectric annealing treatment in oxygen $(hbox{O}-{2})$ and ammonia $(hbox{NH}-{3})$ ambient on the electrical performance of polymer thin-film transistors (PTFTs) based on poly(3-hexylthiophene) are investigated. The PTFTs with $hbox{HfO}-{2}$ gate dielectric and also octadecyltrichlorosilane surface modification, prepared by spin-coating process, exhibit good performance, such as a small threshold voltage of $-$0.5 V and an operating voltage as low as $-$4 V. Results indicate that the PTFT with $hbox{NH}-{3}$-annealed $ hbox{HfO}-{2}$ shows higher carrier mobility, larger on/off current ratio, smaller subthreshold swing, and lower threshold voltage than the PTFT with $hbox{O}-{2}$-annealed $ hbox{HfO}-{2}$. Capacitancevoltage analysis for metal-polymer-oxide-silicon structures indicates that the better electrical performance of the PTFT with $hbox{NH}-{3}$ -annealed $hbox{HfO}-{2}$ is attributed to improved dielectric/polymer interface and reduced series resistance in the transistor. © 2006 IEEE.en_HK
dc.languageengen_HK
dc.publisherIEEE.-
dc.relation.ispartofIEEE Transactions on Device and Materials Reliabilityen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsIEEE Transactions on Device and Materials Reliability. Copyright © IEEE.-
dc.rights©2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectCapacitance-Voltage characteristicsen_HK
dc.subjectHigh-κen_HK
dc.subjectPoly(3-hexylthiophene) (P3HT)en_HK
dc.subjectPolymer thin-film transistor (PTFT)en_HK
dc.titleLow-operating-voltage polymer thin-film transistors based on poly(3-hexylthiophene) with hafnium oxide as the gate dielectricen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1530-4388&volume=10&issue=2&spage=233&epage=237&date=2010&atitle=Low-operating-voltage+polymer+thin-film+transistors+based+on+poly(3-hexylthiophene)+with+hafnium+oxide+as+the+gate+dielectric-
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/TDMR.2010.2042297en_HK
dc.identifier.scopuseid_2-s2.0-77953260831en_HK
dc.identifier.hkuros179084en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77953260831&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume10en_HK
dc.identifier.issue2en_HK
dc.identifier.spage233en_HK
dc.identifier.epage237en_HK
dc.identifier.isiWOS:000278539400008-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLiu, YR=36062331200en_HK
dc.identifier.scopusauthoridDeng, LF=25936092200en_HK
dc.identifier.scopusauthoridYao, RH=16033337600en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK

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