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Article: Influence of octadecyltrichlorosilane surface modification on electrical properties of polymer thin-film transistors studied by capacitancevoltage analysis
| Title | Influence of octadecyltrichlorosilane surface modification on electrical properties of polymer thin-film transistors studied by capacitancevoltage analysis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| Authors | |||||||||||
| Keywords | Capacitancevoltage Characteristics Poly(3-Hexylthiophene) (P3ht) Polymer Thin-Film Transistors (Ptfts) Surface Modification | ||||||||||
| Issue Date | 2011 | ||||||||||
| Citation | Ieee Transactions On Device And Materials Reliability, 2011, v. 11 n. 1, p. 60-65 How to Cite? | ||||||||||
| Abstract | The influence of octadecyltrichlorosilane (OTS) surface modification of a gate dielectric on the electrical properties of polymer thin-film transistors based on poly(3-hexylthiophene) is investigated by using capacitancevoltage analysis. Results show that surface modification using OTS can effectively increase the field-effect mobility in the saturation region by almost two orders of magnitude to and improve the stability of the devices under gate-bias stress. Capacitancevoltage (analysis for the metalpolymeroxidesilicon structures indicates that the frequency-dependent behavior of the characteristics is related to the long relaxation time of the charge carriers in the polymer bulk rather than the trapping effect at the dielectric/polymer interface, and the performance improvement of the devices is attributed to a reduction of localized charges in the polymer bulk. © 2006 IEEE. | ||||||||||
| Persistent Identifier | http://hdl.handle.net/10722/155607 | ||||||||||
| ISSN | 2023 Impact Factor: 2.5 2023 SCImago Journal Rankings: 0.436 | ||||||||||
| ISI Accession Number ID |
Funding Information: This work was supported in part by the National Natural Science Foundation of China under Project 61076113, by the Natural Science Foundation of Guangdong province under Project 8451064101000257, by RGC of Hong Kong under Project HKU 7133/07E, and by the URC for Seed Fund for Strategic Research Theme of HKU on Molecular Materials. | ||||||||||
| References |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Liu, YR | en_US |
| dc.contributor.author | Lai, PT | en_US |
| dc.contributor.author | Yao, RH | en_US |
| dc.contributor.author | Deng, LF | en_US |
| dc.date.accessioned | 2012-08-08T08:34:20Z | - |
| dc.date.available | 2012-08-08T08:34:20Z | - |
| dc.date.issued | 2011 | en_US |
| dc.identifier.citation | Ieee Transactions On Device And Materials Reliability, 2011, v. 11 n. 1, p. 60-65 | en_US |
| dc.identifier.issn | 1530-4388 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10722/155607 | - |
| dc.description.abstract | The influence of octadecyltrichlorosilane (OTS) surface modification of a gate dielectric on the electrical properties of polymer thin-film transistors based on poly(3-hexylthiophene) is investigated by using capacitancevoltage analysis. Results show that surface modification using OTS can effectively increase the field-effect mobility in the saturation region by almost two orders of magnitude to and improve the stability of the devices under gate-bias stress. Capacitancevoltage (analysis for the metalpolymeroxidesilicon structures indicates that the frequency-dependent behavior of the characteristics is related to the long relaxation time of the charge carriers in the polymer bulk rather than the trapping effect at the dielectric/polymer interface, and the performance improvement of the devices is attributed to a reduction of localized charges in the polymer bulk. © 2006 IEEE. | en_US |
| dc.language | eng | en_US |
| dc.relation.ispartof | IEEE Transactions on Device and Materials Reliability | en_US |
| dc.subject | Capacitancevoltage Characteristics | en_US |
| dc.subject | Poly(3-Hexylthiophene) (P3ht) | en_US |
| dc.subject | Polymer Thin-Film Transistors (Ptfts) | en_US |
| dc.subject | Surface Modification | en_US |
| dc.title | Influence of octadecyltrichlorosilane surface modification on electrical properties of polymer thin-film transistors studied by capacitancevoltage analysis | en_US |
| dc.type | Article | en_US |
| dc.identifier.email | Lai, PT:laip@eee.hku.hk | en_US |
| dc.identifier.authority | Lai, PT=rp00130 | en_US |
| dc.description.nature | link_to_subscribed_fulltext | en_US |
| dc.identifier.doi | 10.1109/TDMR.2010.2072992 | en_US |
| dc.identifier.scopus | eid_2-s2.0-79952848744 | en_US |
| dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-79952848744&selection=ref&src=s&origin=recordpage | en_US |
| dc.identifier.volume | 11 | en_US |
| dc.identifier.issue | 1 | en_US |
| dc.identifier.spage | 60 | en_US |
| dc.identifier.epage | 65 | en_US |
| dc.identifier.isi | WOS:000288454700009 | - |
| dc.publisher.place | United States | en_US |
| dc.identifier.scopusauthorid | Liu, YR=36062331200 | en_US |
| dc.identifier.scopusauthorid | Lai, PT=7202946460 | en_US |
| dc.identifier.scopusauthorid | Yao, RH=16033337600 | en_US |
| dc.identifier.scopusauthorid | Deng, LF=25936092200 | en_US |
| dc.identifier.issnl | 1530-4388 | - |