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Article: Influence of octadecyltrichlorosilane surface modification on electrical properties of polymer thin-film transistors studied by capacitancevoltage analysis

TitleInfluence of octadecyltrichlorosilane surface modification on electrical properties of polymer thin-film transistors studied by capacitancevoltage analysis
Authors
KeywordsCapacitancevoltage Characteristics
Poly(3-Hexylthiophene) (P3ht)
Polymer Thin-Film Transistors (Ptfts)
Surface Modification
Issue Date2011
Citation
Ieee Transactions On Device And Materials Reliability, 2011, v. 11 n. 1, p. 60-65 How to Cite?
AbstractThe influence of octadecyltrichlorosilane (OTS) surface modification of a gate dielectric on the electrical properties of polymer thin-film transistors based on poly(3-hexylthiophene) is investigated by using capacitancevoltage analysis. Results show that surface modification using OTS can effectively increase the field-effect mobility in the saturation region by almost two orders of magnitude to and improve the stability of the devices under gate-bias stress. Capacitancevoltage (analysis for the metalpolymeroxidesilicon structures indicates that the frequency-dependent behavior of the characteristics is related to the long relaxation time of the charge carriers in the polymer bulk rather than the trapping effect at the dielectric/polymer interface, and the performance improvement of the devices is attributed to a reduction of localized charges in the polymer bulk. © 2006 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/155607
ISSN
2015 Impact Factor: 1.437
2015 SCImago Journal Rankings: 0.826
ISI Accession Number ID
Funding AgencyGrant Number
National Natural Science Foundation of China61076113
Natural Science Foundation of Guangdong province8451064101000257
RGC of Hong KongHKU 7133/07E
HKU on Molecular Materials
Funding Information:

This work was supported in part by the National Natural Science Foundation of China under Project 61076113, by the Natural Science Foundation of Guangdong province under Project 8451064101000257, by RGC of Hong Kong under Project HKU 7133/07E, and by the URC for Seed Fund for Strategic Research Theme of HKU on Molecular Materials.

References

 

DC FieldValueLanguage
dc.contributor.authorLiu, YRen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorYao, RHen_US
dc.contributor.authorDeng, LFen_US
dc.date.accessioned2012-08-08T08:34:20Z-
dc.date.available2012-08-08T08:34:20Z-
dc.date.issued2011en_US
dc.identifier.citationIeee Transactions On Device And Materials Reliability, 2011, v. 11 n. 1, p. 60-65en_US
dc.identifier.issn1530-4388en_US
dc.identifier.urihttp://hdl.handle.net/10722/155607-
dc.description.abstractThe influence of octadecyltrichlorosilane (OTS) surface modification of a gate dielectric on the electrical properties of polymer thin-film transistors based on poly(3-hexylthiophene) is investigated by using capacitancevoltage analysis. Results show that surface modification using OTS can effectively increase the field-effect mobility in the saturation region by almost two orders of magnitude to and improve the stability of the devices under gate-bias stress. Capacitancevoltage (analysis for the metalpolymeroxidesilicon structures indicates that the frequency-dependent behavior of the characteristics is related to the long relaxation time of the charge carriers in the polymer bulk rather than the trapping effect at the dielectric/polymer interface, and the performance improvement of the devices is attributed to a reduction of localized charges in the polymer bulk. © 2006 IEEE.en_US
dc.languageengen_US
dc.relation.ispartofIEEE Transactions on Device and Materials Reliabilityen_US
dc.subjectCapacitancevoltage Characteristicsen_US
dc.subjectPoly(3-Hexylthiophene) (P3ht)en_US
dc.subjectPolymer Thin-Film Transistors (Ptfts)en_US
dc.subjectSurface Modificationen_US
dc.titleInfluence of octadecyltrichlorosilane surface modification on electrical properties of polymer thin-film transistors studied by capacitancevoltage analysisen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/TDMR.2010.2072992en_US
dc.identifier.scopuseid_2-s2.0-79952848744en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79952848744&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume11en_US
dc.identifier.issue1en_US
dc.identifier.spage60en_US
dc.identifier.epage65en_US
dc.identifier.isiWOS:000288454700009-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLiu, YR=36062331200en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridYao, RH=16033337600en_US
dc.identifier.scopusauthoridDeng, LF=25936092200en_US

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