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Article: Bias-stress-induced instability of polymer thin-film transistor based on poly(3-hexylthiophene)

TitleBias-stress-induced instability of polymer thin-film transistor based on poly(3-hexylthiophene)
Authors
KeywordsBias Stress Effect
Polymer Thin-Film Transistor (Ptft)
Stability
Threshold-Voltage Shift
Issue Date2012
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298
Citation
IEEE Transactions on Device and Materials Reliability, 2012, v. 12 n. 1, p. 58-62 How to Cite?
AbstractA polymer thin-film transistor (PTFT) based on poly(3-hexylthiophene) (P3HT) is fabricated by a spin-coating process and characterized. Its bias-stress-induced instability during operation is investigated as a function of time and temperature. For negative gate-bias stress, the carrier mobility remains unchanged, the off-state current decreases, and the threshold voltage shifts toward the negative direction. On the other hand, for negative drain-bias stress, the carrier mobility decreases slightly, the off-state current increases, and the threshold voltage shifts toward the positive direction. The threshold shifts under gate- and drain-bias stresses are observed to be logarithmically dependent on time, and the decay rate of the threshold-voltage shift is independent of temperature. The results suggest that the origin of the threshold-voltage shift upon negative gate-bias stress is predominantly associated with holes trapped within the SiO 2 gate dielectric or at the P3HT/SiO 2 interface, while time-dependent charge trapping in the deep trap states and creation of defect states in the channel region are responsible for the drain-bias stress effect on the PTFT. © 2011 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/155740
ISSN
2015 Impact Factor: 1.437
2015 SCImago Journal Rankings: 0.826
ISI Accession Number ID
Funding AgencyGrant Number
National Natural Science Foundation of China61076113
Natural Science Foundation of Guangdong Province8451064101000257
RGC of Hong KongHKU 7133/07E
URC of HKU on Molecular Materials
Funding Information:

This work was supported in part by the National Natural Science Foundation of China under Project 61076113, by the Natural Science Foundation of Guangdong Province under Project 8451064101000257, by RGC of Hong Kong under Project HKU 7133/07E, and by the URC for Seed Fund for Strategic Research Theme of HKU on Molecular Materials.

References

 

DC FieldValueLanguage
dc.contributor.authorLiu, YRen_US
dc.contributor.authorLiao, Ren_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorYao, RHen_US
dc.date.accessioned2012-08-08T08:35:07Z-
dc.date.available2012-08-08T08:35:07Z-
dc.date.issued2012en_US
dc.identifier.citationIEEE Transactions on Device and Materials Reliability, 2012, v. 12 n. 1, p. 58-62en_US
dc.identifier.issn1530-4388en_US
dc.identifier.urihttp://hdl.handle.net/10722/155740-
dc.description.abstractA polymer thin-film transistor (PTFT) based on poly(3-hexylthiophene) (P3HT) is fabricated by a spin-coating process and characterized. Its bias-stress-induced instability during operation is investigated as a function of time and temperature. For negative gate-bias stress, the carrier mobility remains unchanged, the off-state current decreases, and the threshold voltage shifts toward the negative direction. On the other hand, for negative drain-bias stress, the carrier mobility decreases slightly, the off-state current increases, and the threshold voltage shifts toward the positive direction. The threshold shifts under gate- and drain-bias stresses are observed to be logarithmically dependent on time, and the decay rate of the threshold-voltage shift is independent of temperature. The results suggest that the origin of the threshold-voltage shift upon negative gate-bias stress is predominantly associated with holes trapped within the SiO 2 gate dielectric or at the P3HT/SiO 2 interface, while time-dependent charge trapping in the deep trap states and creation of defect states in the channel region are responsible for the drain-bias stress effect on the PTFT. © 2011 IEEE.en_US
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298-
dc.relation.ispartofIEEE Transactions on Device and Materials Reliabilityen_US
dc.rightsIEEE Transactions on Device and Materials Reliability. Copyright © IEEE-
dc.rights©2012 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectBias Stress Effecten_US
dc.subjectPolymer Thin-Film Transistor (Ptft)en_US
dc.subjectStabilityen_US
dc.subjectThreshold-Voltage Shiften_US
dc.titleBias-stress-induced instability of polymer thin-film transistor based on poly(3-hexylthiophene)en_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1109/TDMR.2011.2163408en_US
dc.identifier.scopuseid_2-s2.0-84863245472-
dc.identifier.hkuros225745-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84858111423&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume12en_US
dc.identifier.issue1en_US
dc.identifier.spage58en_US
dc.identifier.epage62en_US
dc.identifier.isiWOS:000301236700009-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLiu, YR=55082696500en_US
dc.identifier.scopusauthoridLiao, R=36655841600en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridYao, RH=16033337600en_US

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