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Browsing by Author Xu, JP
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Showing results 21 to 40 of 58
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Title
Author(s)
Issue Date
Fabrication and electrical performance of CVD-grown MoS2 transistor
Proceeding/Conference:
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Wen, M
Xu, JP
Liu, L
Zhao, X
Lai, PT
Tang, WM
2017
A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric
Journal:
Microelectronics Reliability
Ji, F
Xu, JP
Lai, PT
Guan, JG
2008
GaAs Metal–Oxide–Semiconductor Capacitor With Nd-Based High-k Oxynitrides as Gate Dielectric and Passivation Layer
Journal:
IEEE Transactions on Electron Devices
LIU, L
Choi, HW
Xu, JP
Tang, WM
Lai, PT
2018
Gate leakage properties of MOS devices with TriLayer high-k gate dielectric
Proceeding/Conference:
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Chen, WB
Xu, JP
Lai, PT
Li, YP
Xu, SG
2006
High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric
Journal:
Applied Physics Letters
LIU, L
Choi, HW
Xu, JP
Lai, PT
2017
Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate
Journal:
IEEE Transactions on Electron Devices
Cheng, ZX
Liu, L
Xu, JP
Huang, Y
Lai, PT
Tang, WM
2016
Impacts of Ti incorporation on the electrical properties and reliability of GaAs metal-oxide-semiconductor capacitors with high-k NdTiON as gate dielectric
Proceeding/Conference:
IEEE Semiconductor Interface Specialists Conference
Liu, LN
Choi, HW
Xu, JP
Lai, PT
2016
Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric
Journal:
IEEE Transactions on Electron Devices
Wen, M
Xu, JP
Liu, L
Lai, PT
Tang, WM
2017
Improved Electrical Properties and Reliability of GaAs Metal–Oxide–Semiconductor Capacitor by Using LaAlON Passivation Layer
Journal:
Physica Status Solidi - Rapid Research Letters
LIU, L
Choi, HW
Xu, JP
Lai, PT
2017
Improved electrical properties of GaAs MOS capacitor by using HfLaON passivation layer
Proceeding/Conference:
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Liu, LN
Choi, HW
Lai, PT
Xu, JP
2016
Improved electrical properties of MoS2 transistor with Hf1-xTixO as gate dielectric
Proceeding/Conference:
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Zhao, X
Xu, JP
Liu, L
Lai, PT
Tang, WM
2019
Improved I-V characteristics of SiC MOSFETs by TCE thermal gate oxidation
Proceeding/Conference:
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Yang, BL
Lin, LM
Xu, JP
Lai, PT
2006
Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer
Journal:
Applied Physics Letters
Ji, F
Xu, JP
Liu, JG
Li, CX
Lai, PT
2011
Improved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer
Journal:
IEEE Transactions on Device and Materials Reliability
Lu, HH
Xu, JP
Liu, L
Lai, PT
Tang, WM
2017
Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer
Journal:
IEEE Transactions on Electron Devices
Lu, HH
Liu, L
Xu, JP
Lai, PT
Tang, WM
2017
Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer
Journal:
Applied Physics Letters
Cheng, ZX
Xu, JP
Liu, L
Huang, Y
Lai, PT
Tang, WM
2016
Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer
Journal:
Applied Physics Letters
HUANG, Y
XU, JP
LIU, L
CHENG, ZX
Lai, PT
TANG, WM
2017
Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation
Journal:
Applied Physics Letters
Huang, Y
Xu, JP
Liu, L
Lai, PT
Tang, WM
2016
Improved interfacial and electrical properties of HfTiON gate-dielectric Ge MOS capacitor by using LaON/Si dual passivation layer and fluorine-plasma treatment
Journal:
Applied Surface Science
Huang, Y
Xu, JP
Liu, L
Cheng, ZX
Lai, PT
Tang, WM
2019
Improved Interfacial and Electrical Properties of MoS2 Transistor With High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric
Journal:
IEEE Electron Device Letters
Zhao, XY
Xu, JP
Liu, L
Lai, PT
Tang, WM
2020
