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Conference Paper: Improved I-V characteristics of SiC MOSFETs by TCE thermal gate oxidation

TitleImproved I-V characteristics of SiC MOSFETs by TCE thermal gate oxidation
Authors
KeywordsComputers
Circuits
Issue Date2006
PublisherIEEE.
Citation
2005 Ieee Conference On Electron Devices And Solid-State Circuits, Edssc, 2006, p. 803-806 How to Cite?
AbstractThe effects of TCE (trichloroethylene) thermal gate oxidation on the electrical characteristics of SiC MOSFETs are investigated. It is found that TCE thermal gate oxidation can improve the I d-V d characteristics, increase the field-effect mobility, and reduce the threshold voltage and sub-threshold slope of the devices. The better device characteristics are believed to be attributed to the TCE-induced reductions of charges in the gate oxide and traps at the SiO/SiO 2 interface, and also to the gettering of charged impurities and reduction of physical defects by the chlorine incorporated in the gate oxide. ©2005 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/45916
References

 

DC FieldValueLanguage
dc.contributor.authorYang, BLen_HK
dc.contributor.authorLin, LMen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2007-10-30T06:38:25Z-
dc.date.available2007-10-30T06:38:25Z-
dc.date.issued2006en_HK
dc.identifier.citation2005 Ieee Conference On Electron Devices And Solid-State Circuits, Edssc, 2006, p. 803-806en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45916-
dc.description.abstractThe effects of TCE (trichloroethylene) thermal gate oxidation on the electrical characteristics of SiC MOSFETs are investigated. It is found that TCE thermal gate oxidation can improve the I d-V d characteristics, increase the field-effect mobility, and reduce the threshold voltage and sub-threshold slope of the devices. The better device characteristics are believed to be attributed to the TCE-induced reductions of charges in the gate oxide and traps at the SiO/SiO 2 interface, and also to the gettering of charged impurities and reduction of physical defects by the chlorine incorporated in the gate oxide. ©2005 IEEE.en_HK
dc.format.extent484509 bytes-
dc.format.extent6324 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartof2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSCen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.subjectComputersen_HK
dc.subjectCircuitsen_HK
dc.titleImproved I-V characteristics of SiC MOSFETs by TCE thermal gate oxidationen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/EDSSC.2005.1635399en_HK
dc.identifier.scopuseid_2-s2.0-43549105909en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-43549105909&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage803en_HK
dc.identifier.epage806en_HK
dc.identifier.scopusauthoridYang, BL=24777588400en_HK
dc.identifier.scopusauthoridLin, LM=8642604900en_HK
dc.identifier.scopusauthoridXu, JP=35754128700en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK

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