Showing results 4 to 7 of 7
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Title | Author(s) | Issue Date | |
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A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric Journal:Microelectronics Reliability | 2008 | ||
2008 | |||
Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer Journal:Applied Physics Letters | 2007 | ||
Influence of sidewall spacer on threshold voltage of MOSFET with high-k gate dielectric Journal:Microelectronics Reliability | 2008 |