Showing results 12 to 16 of 16
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Title | Author(s) | Issue Date | Views | |
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Observation of 'ghost' islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy Journal:Physical Review Letters | 2000 | 178 | ||
Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy Journal:Applied Physics Letters | 2000 | 273 | ||
2000 | 233 | |||
Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy Journal:Physical Review B (Condensed Matter) | 2000 | 147 | ||
Surface morphology of GaN: Flat versus vicinal surfaces Proceeding/Conference:Materials Research Society Symposium - Proceedings | 2000 | 111 |