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Conference Paper: Nanopatterning GaN with microspheres

TitleNanopatterning GaN with microspheres
Authors
Ng, WNWang, XLeung, CHLai, PTChoi, HW
Issue Date2008
PublisherWiley - VCH Verlag GmbH & Co KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/102519628
Citation
The 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, NV., 16-21 September 2007. In Physica Status Solidi (C) Current Topics In Solid State Physics, 2008, v. 5 n. 6, p. 1615-1617 How to Cite?
DOI: http://dx.doi.org/10.1002/pssc.200778540
AbstractIn this work, the fabrication and characterization of nanopillar arrays on GaN substrates using the technique of microsphere lithography have been demonstrated. Self-assembled hexagonally-packed silica microsphere array were formed on GaN wafers by the methods of spin coating and tilting. By precisely controlling the process parameters, a monolayer of microsphere array can be formed over a wide region, acting as a hard-mask for pattern transfer of the nanostructures. After dry etching, arrays of nano-pillars were formed on the surface of the wafer. The structure properties of the ordered nanostructures were characterized by SEM images, while photoluminescence (PL) measurements revealed a twofold enhancement of light emission intensity. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.
DescriptionThis journal issue entitled: Special Issue: 7th International Conference on Nitride Semiconductors (ICNS-7)
Persistent Identifierhttp://hdl.handle.net/10722/73685
ISSN
1862-6351
2020 SCImago Journal Rankings: 0.210
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorNg, WNen_HK
dc.contributor.authorWang, Xen_HK
dc.contributor.authorLeung, CHen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChoi, HWen_HK
dc.creatorsml 151028 - merged-
dc.date.accessioned2010-09-06T06:53:46Z-
dc.date.available2010-09-06T06:53:46Z-
dc.date.issued2008en_HK
dc.identifier.citationThe 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, NV., 16-21 September 2007. In Physica Status Solidi (C) Current Topics In Solid State Physics, 2008, v. 5 n. 6, p. 1615-1617en_HK
dc.identifier.issn1862-6351en_HK
dc.identifier.urihttp://hdl.handle.net/10722/73685-
dc.descriptionThis journal issue entitled: Special Issue: 7th International Conference on Nitride Semiconductors (ICNS-7)-
dc.description.abstractIn this work, the fabrication and characterization of nanopillar arrays on GaN substrates using the technique of microsphere lithography have been demonstrated. Self-assembled hexagonally-packed silica microsphere array were formed on GaN wafers by the methods of spin coating and tilting. By precisely controlling the process parameters, a monolayer of microsphere array can be formed over a wide region, acting as a hard-mask for pattern transfer of the nanostructures. After dry etching, arrays of nano-pillars were formed on the surface of the wafer. The structure properties of the ordered nanostructures were characterized by SEM images, while photoluminescence (PL) measurements revealed a twofold enhancement of light emission intensity. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.en_HK
dc.languageengen_HK
dc.publisherWiley - VCH Verlag GmbH & Co KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/102519628en_HK
dc.relation.ispartofPhysica Status Solidi (C) Current Topics in Solid State Physicsen_HK
dc.titleNanopatterning GaN with microspheresen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1610-1634&volume=5&spage=1615&epage=&date=2008&atitle=Nanopatterning+GaN+with+Microspheresen_HK
dc.identifier.emailLeung, CH:chleung@eee.hku.hken_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityLeung, CH=rp00146en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/pssc.200778540en_HK
dc.identifier.scopuseid_2-s2.0-77951220945en_HK
dc.identifier.hkuros146757en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77951220945&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume5en_HK
dc.identifier.issue6en_HK
dc.identifier.spage1615en_HK
dc.identifier.epage1617en_HK
dc.publisher.placeGermanyen_HK
dc.identifier.hkulrp150354-
dc.identifier.scopusauthoridNg, WN=23486567300en_HK
dc.identifier.scopusauthoridWang, XH=34168501000en_HK
dc.identifier.scopusauthoridLeung, CH=7402612415en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.identifier.issnl1610-1634-

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