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Conference Paper: Influences of processing technique on electrical characteristics of TVS used in communication systems

TitleInfluences of processing technique on electrical characteristics of TVS used in communication systems
Authors
Zeng, XRLiu, BYLi, BLai, PT
KeywordsElectronics
Issue Date1998
PublisherIEEE.
Citation
IEEE Hong Kong Electron Devices Meeting Proceedings, Hong Kong, China, 29 August 1998, p. 109-112 How to Cite?
DOI: http://dx.doi.org/10.1109/HKEDM.1998.740199
AbstractAn improved technique is proposed in fabricating a semiconductor surge protection device which is used in high-speed wideband information transmission systems. In order to increase the surge handling capability of the device, a double p-type diffusion is used. Specifically, in the diffusion step of gallium, SiO2 is used as a mask to obtain a very small base width and to avoid the reduction of carrier lifetime. It is found that this is a very useful way to reduce the on-state voltage drop and therefore the energy dissipation of the device.
Persistent Identifierhttp://hdl.handle.net/10722/46107

 

DC FieldValueLanguage
dc.contributor.authorZeng, XRen_HK
dc.contributor.authorLiu, BYen_HK
dc.contributor.authorLi, Ben_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2007-10-30T06:42:42Z-
dc.date.available2007-10-30T06:42:42Z-
dc.date.issued1998en_HK
dc.identifier.citationIEEE Hong Kong Electron Devices Meeting Proceedings, Hong Kong, China, 29 August 1998, p. 109-112en_HK
dc.identifier.urihttp://hdl.handle.net/10722/46107-
dc.description.abstractAn improved technique is proposed in fabricating a semiconductor surge protection device which is used in high-speed wideband information transmission systems. In order to increase the surge handling capability of the device, a double p-type diffusion is used. Specifically, in the diffusion step of gallium, SiO2 is used as a mask to obtain a very small base width and to avoid the reduction of carrier lifetime. It is found that this is a very useful way to reduce the on-state voltage drop and therefore the energy dissipation of the device.en_HK
dc.format.extent325012 bytes-
dc.format.extent6324 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.rights©1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectElectronicsen_HK
dc.titleInfluences of processing technique on electrical characteristics of TVS used in communication systemsen_HK
dc.typeConference_Paperen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/HKEDM.1998.740199en_HK
dc.identifier.scopuseid_2-s2.0-85051777733-
dc.identifier.hkuros44824-

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