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Conference Paper: Theory of critical layer thickness of noncontant quantum-well width produced by interdiffusion and its optoelectronics consequence
| Title | Theory of critical layer thickness of noncontant quantum-well width produced by interdiffusion and its optoelectronics consequence |
|---|---|
| Authors | |
| Keywords | Physics engineering chemsitry |
| Issue Date | 1998 |
| Publisher | Materials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html |
| Citation | Infrared applications of semiconductors II, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 1-4 December 1997, v. 484, p. 425-430 How to Cite? |
| Abstract | In this paper, the concept of critical layer thickness is applied to the interdiffused quantum well (DFQW) structure. For the as-grown InGaAs/InP lattice matched quantum well, the interdiffusion process will induce in-plane strain into the DFQW forming a lattice mismatched system. The relation between the as-grown well width (Lz) and the diffusion length (Ld) for formation of dislocation is presented. |
| Persistent Identifier | http://hdl.handle.net/10722/46082 |
| ISSN | 2019 SCImago Journal Rankings: 0.114 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chan, MCY | en_HK |
| dc.contributor.author | Li, EH | en_HK |
| dc.date.accessioned | 2007-10-30T06:42:09Z | - |
| dc.date.available | 2007-10-30T06:42:09Z | - |
| dc.date.issued | 1998 | en_HK |
| dc.identifier.citation | Infrared applications of semiconductors II, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 1-4 December 1997, v. 484, p. 425-430 | en_HK |
| dc.identifier.issn | 0272-9172 | en_HK |
| dc.identifier.uri | http://hdl.handle.net/10722/46082 | - |
| dc.description.abstract | In this paper, the concept of critical layer thickness is applied to the interdiffused quantum well (DFQW) structure. For the as-grown InGaAs/InP lattice matched quantum well, the interdiffusion process will induce in-plane strain into the DFQW forming a lattice mismatched system. The relation between the as-grown well width (Lz) and the diffusion length (Ld) for formation of dislocation is presented. | en_HK |
| dc.format.extent | 262508 bytes | - |
| dc.format.extent | 14323 bytes | - |
| dc.format.mimetype | application/pdf | - |
| dc.format.mimetype | text/plain | - |
| dc.language | eng | en_HK |
| dc.publisher | Materials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html | en_HK |
| dc.rights | Materials Research Society Symposium Proceedings. Copyright © Materials Research Society. | en_HK |
| dc.subject | Physics engineering chemsitry | en_HK |
| dc.title | Theory of critical layer thickness of noncontant quantum-well width produced by interdiffusion and its optoelectronics consequence | en_HK |
| dc.type | Conference_Paper | en_HK |
| dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=484&spage=425&epage=430&date=1998&atitle=Theory+of+critical+layer+thickness+of+noncontant+quantum-well+width+produced+by+interdiffusion+and+its+optoelectronics+consequence | en_HK |
| dc.description.nature | published_or_final_version | en_HK |
| dc.identifier.hkuros | 38001 | - |
| dc.identifier.issnl | 0272-9172 | - |