Showing results 1 to 2 of 2
Title | Author(s) | Issue Date | |
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High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology | 2020 | ||
Photoluminescence enhancement in defect monolayer MoSe<inf>2</inf> by hydrohalic acid treatment Proceeding/Conference:2016 Conference on Lasers and Electro-Optics, CLEO 2016 | 2016 |