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Showing results 1 to 20 of 20

Title	Author(s)	Issue Date
An approach to optical-property profiling of a planar-waveguide structure of Si nanocrystals embedded in SiO2 Journal:Nanotechnology	Ding, L Chen, TP Liu, Y Ng, CY Fung, S	2005
Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation Journal:Journal of Applied Physics	Yang, M Chen, TP Wong, JI Ng, CY Liu, Y Ding, L Fung, S Trigg, AD Tung, CH Li, CM	2007
Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide Journal:Electrochemical and Solid-State Letters	Liu, Y Chen, TP Ng, CY Tse, MS Fung, S Liu, YC Li, S Zhao, P	2004
Depth profiling of charging effect of Si nanocrystals embedded in SiO2: A study of charge diffusion among Si nanocrystals Journal:Journal of Physical Chemistry B	Liu, Y Chen, TP Ng, CY Ding, L Zhang, S Fu, YQ Fung, S	2006
Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO 2 thin films Journal:Applied Physics Letters	Ding, L Chen, TP Wong, JI Yang, M Liu, Y Ng, CY Liu, YC Tung, CH Trigg, AD Fung, S	2006
Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams Journal:Journal of Applied Physics	Ng, CY Chen, TP Zhao, P Ding, L Liu, Y Tseng, AA Fung, S	2006
Evolution of photoluminescence mechanisms of Si +-implanted SiO 2 films with thermal annealing Journal:Journal of Nanoscience and Nanotechnology	Ding, L Chen, TP Liu, Y Ng, CY Yang, M Wong, JI Zhu, FR Tan, MC Fung, S Chen, XD Huang, Y	2008
Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure Journal:Journal of Applied Physics	Liu, Y Chen, TP Ding, L Yang, M Wong, JI Ng, CY Yu, SF Li, ZX Yuen, C Zhu, FR Tan, MC Fung, S	2007
Influence of nitrogen on tunneling barrier heights and effective masses of electrons and holes at lightly-nitrided SiO2/Si interface Journal:Journal of Applied Physics	Ng, CY Chen, TP Liu, Y Sun, CQ Fung, S	2004
Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance Journal:IEEE Transactions on Electron Devices	Ng, CY Chen, TP Ding, L Yang, M Wong, JI Zhao, P Yang, XH Liu, KY Tse, MS Trigg, AD Fung, S	2006
Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures Journal:IEEE Transactions on Electron Devices	Liu, Y Chen, TP Ng, CY Ding, L Tse, MS Fung, S Tseng, AA	2006
Influence of silicon-nanocrystal distribution in SiO2 matrix on charge injection and charge decay Journal:Applied Physics Letters	Ng, CY Chen, TP Tse, MS Lim, VSW Fung, S Tseng, AA	2005
Memory characteristics of MOSFETs with densely stacked silicon nanocrystal layers in the gate oxide synthesized by low-energy ion beam Journal:IEEE Electron Device Letters	Ng, CY Chen, TP Ding, L Fung, S	2006
Methods in angle-resolved photoelectron diffraction: Slab method versus separable propagator cluster approach Journal:Physical Review B (Condensed Matter)	Wu, H Ng, CY Chu, TP Tong, SY	1998
Optical properties of silicon nanocrystals embedded in a SiO2 matrix Journal:Physical Review B (Condensed Matter and Materials Physics)	Ding, L Chen, TP Liu, Y Ng, CY Fung, S	2005
Random capacitance modulation due to charging/discharging in Si nanocrystals embedded in gate dielectric Journal:Nanotechnology	Liu, Y Chen, TP Ng, CY Tse, MS Zhao, P Fu, YQ Zhang, S Fung, S	2005
Si ion-induced instability in flatband Voltage of Si/sup +/-implanted gate oxides Journal:IEEE Transactions on Electron Devices	Ng, CY Chen, TP Ding, L Chen, Q Liu, Y Zhao, P Tseng, AA Fung, SHY	2006
Static dielectric constant of isolated silicon nanocrystals embedded in a SiO 2 thin film Journal:Applied Physics Letters	Ng, CY Chen, TP Ding, L Liu, Y Tse, MS Fung, S Dong, ZL	2006
The X-Ray Polarimetry View of the Accreting Pulsar Cen X-3 Journal:Astrophysical Journal Letters	Tsygankov, SS Doroshenko, V Poutanen, J Heyl, J Mushtukov, AA Caiazzo, I Di Marco, A Forsblom, SV Gonzalez-Caniulef, D Klawin, M La Monaca, F Malacaria, C Marshall, HL Muleri, F Ng, M Suleimanov, VF Sunyaev, RA Turolla, R Agudo, I Antonelli, LA Bachetti, M Baldini, L Baumgartner, WH Bellazzini, R Bianchi, S Bongiorno, SD Bonino, R Brez, A Bucciantini, N Capitanio, F Castellano, S Cavazzuti, E Ciprini, S Costa, E De Rosa, A Del Monte, E Di Gesu, L Di Lalla, N Donnarumma, I Dovciak, M Ehlert, SR Enoto, T Evangelista, Y Fabiani, S Ferrazzoli, R Garcia, JA Gunji, S Hayashida, K Iwakiri, W Jorstad, SG Karas, V Kitaguchi, T Kolodziejczak, JJ Krawczynski, H Latronico, L Liodakis, I Maldera, S Manfreda, A Marin, F Marinucci, A Marscher, AP Matt, G Mitsuishi, I Mizuno, T Ng, CY O'Dell, SL Omodei, N Oppedisano, C Papitto, A Pavlov, GG Peirson, AL Perri, M Pesce-Rollins, M Petrucci, PO Pilia, M Possenti, A Puccetti, S Ramsey, BD Rankin, J Ratheesh, A Romani, RW Sgro, C Slane, P Soffitta, P Spandre, G Tamagawa, T Tavecchio, F Taverna, R Tawara, Y Tennant, AF Thomas, NE Tombesi, F Trois, A Vink, J Weisskopf, MC Wu, KW Xie, F Zane, S	1-Dec-2022
Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO 2 matrix Journal:Applied Physics Letters	Ding, L Chen, TP Liu, Y Ng, CY Liu, YC Fung, S	2005

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