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Article: Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO 2 matrix
Title | Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO 2 matrix |
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Authors | |
Keywords | Physics Engineering |
Issue Date | 2005 |
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 2005, v. 87 n. 12, article no. 121903, p. 1-3 How to Cite? |
Abstract | The thermal annealing effect on band gap and dielectric functions of silicon nanocrystals (nc-Si) embedded in a Si O2 matrix synthesized by Si ion implantation is investigated by spectroscopic ellipsometry. A large band-gap expansion of nc-Si relative to bulk crystalline silicon has been observed. The band gap of the nc-Si for the nonannealing condition (i.e., as implanted) is 1.78 eV while it is 1.72 eV for the annealing at 1000 °C for 100 min. The slight decrease in the band gap is attributed to the slight increase in the nc-Si size with annealing. The dielectric functions of nc-Si show a significant suppression, as compared to bulk crystalline silicon, due to the quantum size effect. Annealing results in a small change in the static dielectric constant, which can be explained in terms of the size effect also. © 2005 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/45249 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Ding, L | en_HK |
dc.contributor.author | Chen, TP | en_HK |
dc.contributor.author | Liu, Y | en_HK |
dc.contributor.author | Ng, CY | en_HK |
dc.contributor.author | Liu, YC | en_HK |
dc.contributor.author | Fung, S | en_HK |
dc.date.accessioned | 2007-10-30T06:20:59Z | - |
dc.date.available | 2007-10-30T06:20:59Z | - |
dc.date.issued | 2005 | en_HK |
dc.identifier.citation | Applied Physics Letters, 2005, v. 87 n. 12, article no. 121903, p. 1-3 | - |
dc.identifier.issn | 0003-6951 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/45249 | - |
dc.description.abstract | The thermal annealing effect on band gap and dielectric functions of silicon nanocrystals (nc-Si) embedded in a Si O2 matrix synthesized by Si ion implantation is investigated by spectroscopic ellipsometry. A large band-gap expansion of nc-Si relative to bulk crystalline silicon has been observed. The band gap of the nc-Si for the nonannealing condition (i.e., as implanted) is 1.78 eV while it is 1.72 eV for the annealing at 1000 °C for 100 min. The slight decrease in the band gap is attributed to the slight increase in the nc-Si size with annealing. The dielectric functions of nc-Si show a significant suppression, as compared to bulk crystalline silicon, due to the quantum size effect. Annealing results in a small change in the static dielectric constant, which can be explained in terms of the size effect also. © 2005 American Institute of Physics. | en_HK |
dc.format.extent | 78820 bytes | - |
dc.format.extent | 13983 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | application/pdf | - |
dc.language | eng | en_HK |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_HK |
dc.relation.ispartof | Applied Physics Letters | en_HK |
dc.rights | Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2005, v. 87 n. 12, article no. 121903, p. 1-3 and may be found at https://doi.org/10.1063/1.2051807 | - |
dc.subject | Physics Engineering | en_HK |
dc.title | Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO 2 matrix | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=87&issue=12&spage=121903:1&epage=3&date=2005&atitle=Thermal+annealing+effect+on+the+band+gap+and+dielectric+functions+of+silicon+nanocrystals+embedded+in+SIO2+matrix | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1063/1.2051807 | en_HK |
dc.identifier.scopus | eid_2-s2.0-28344438937 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-28344438937&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 87 | en_HK |
dc.identifier.issue | 12 | en_HK |
dc.identifier.spage | article no. 121903, p. 1 | - |
dc.identifier.epage | article no. 121903, p. 3 | - |
dc.identifier.isi | WOS:000231907200019 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Ding, L=21233704100 | en_HK |
dc.identifier.scopusauthorid | Chen, TP=7405540443 | en_HK |
dc.identifier.scopusauthorid | Liu, Y=36064444100 | en_HK |
dc.identifier.scopusauthorid | Ng, CY=8604409400 | en_HK |
dc.identifier.scopusauthorid | Liu, YC=36062391300 | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.issnl | 0003-6951 | - |