Browsing "Department of Electrical & Electronic Engineering" by Author yang, peng

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 中
Showing results 1 to 5 of 5
TitleAuthor(s)Issue Date
 
A 2D Heterostructure‐Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing
Journal:Advanced Materials
Zha, JiajiaXia, YunpengShi, ShuhuiHuang, HaoxinLi, SiyuanQian, ChenWang, HuideYang, PengZhang, ZhuominMeng, YouWang, WeiYang, ZhengbaoYu, HongyuHo, Johnny CWang, ZhongruiTan, Chaoliang
2-Dec-2023
 
Augmented Synchronization of Power Systems
Journal:IEEE Transactions on Automatic Control
Yang, PengLiu, FengLiu, TaoHill, David J
1-Oct-2023
 
Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band
Journal:Advanced Materials
Zha, JiajiaShi, ShuhuiChaturvedi, ApoorvaHuang, HaoxinYang, PengYao, YaoLi, SiyuanXia, YunpengZhang, ZhuominWang, WeiWang, HuideWang, ShaocongYuan, ZhenYang, ZhengbaoHe, QiyuanTai, HuilingTeo, Edwin Hang TongYu, HongyuHo, Johnny C.Wang, ZhongruiZhang, HuaTan, Chaoliang
2023
 
Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility
Journal:Nano-Micro Letters
Yang, PengZha, JiajiaGao, GuoyunZheng, LongHuang, HaoxinXia, YunpengXu, SongcenXiong, TengfeiZhang, ZhuominYang, ZhengbaoChen, YeKi, Dong KeunLiou, Juin J.Liao, WugangTan, Chaoliang
2022
 
Uncovering the Role of Crystal Phase in Determining Nonvolatile Flash Memory Device Performance Fabricated from MoTe<inf>2</inf>-Based 2D van der Waals Heterostructures
Journal:ACS applied materials & interfaces
Xia, YunpengZha, JiajiaHuang, HaoxinWang, HuideYang, PengZheng, LongZhang, ZhuominYang, ZhengbaoChen, YeChan, Hau PingHo, Johnny C.Tan, Chaoliang
2023
Showing results 1 to 5 of 5