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Article: Uncovering the Role of Crystal Phase in Determining Nonvolatile Flash Memory Device Performance Fabricated from MoTe2-Based 2D van der Waals Heterostructures

TitleUncovering the Role of Crystal Phase in Determining Nonvolatile Flash Memory Device Performance Fabricated from MoTe<inf>2</inf>-Based 2D van der Waals Heterostructures
Authors
Keywords2D van der Waals heterostructures
crystal phase
flash memory devices
floating gate
MoTe2 nanosheets
Issue Date2023
Citation
ACS applied materials &amp; interfaces, 2023, v. 15, n. 29, p. 35196-35205 How to Cite?
AbstractAlthough the crystal phase of two-dimensional (2D) transition metal dichalcogenides (TMDs) has been proven to play an essential role in fabricating high-performance electronic devices in the past decade, its effect on the performance of 2D material-based flash memory devices still remains unclear. Here, we report the exploration of the effect of MoTe2 in different phases as the charge-trapping layer on the performance of 2D van der Waals (vdW) heterostructure-based flash memory devices, where a metallic 1T'-MoTe2 or semiconducting 2H-MoTe2 nanoflake is used as the floating gate. By conducting comprehensive measurements on the two kinds of vdW heterostructure-based devices, the memory device based on MoS2/h-BN/1T'-MoTe2 presents much better performance, including a larger memory window, faster switching speed (100 ns), and higher extinction ratio (107), than that of the device based on the MoS2/h-BN/2H-MoTe2 heterostructure. Moreover, the device based on the MoS2/h-BN/1T'-MoTe2 heterostructure also shows a long cycle (>1200 cycles) and retention (>3000 s) stability. Our study clearly demonstrates that the crystal phase of 2D TMDs has a significant impact on the performance of nonvolatile flash memory devices based on 2D vdW heterostructures, which paves the way for the fabrication of future high-performance memory devices based on 2D materials.
Persistent Identifierhttp://hdl.handle.net/10722/329994
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorXia, Yunpeng-
dc.contributor.authorZha, Jiajia-
dc.contributor.authorHuang, Haoxin-
dc.contributor.authorWang, Huide-
dc.contributor.authorYang, Peng-
dc.contributor.authorZheng, Long-
dc.contributor.authorZhang, Zhuomin-
dc.contributor.authorYang, Zhengbao-
dc.contributor.authorChen, Ye-
dc.contributor.authorChan, Hau Ping-
dc.contributor.authorHo, Johnny C.-
dc.contributor.authorTan, Chaoliang-
dc.date.accessioned2023-08-09T03:37:03Z-
dc.date.available2023-08-09T03:37:03Z-
dc.date.issued2023-
dc.identifier.citationACS applied materials &amp; interfaces, 2023, v. 15, n. 29, p. 35196-35205-
dc.identifier.urihttp://hdl.handle.net/10722/329994-
dc.description.abstractAlthough the crystal phase of two-dimensional (2D) transition metal dichalcogenides (TMDs) has been proven to play an essential role in fabricating high-performance electronic devices in the past decade, its effect on the performance of 2D material-based flash memory devices still remains unclear. Here, we report the exploration of the effect of MoTe2 in different phases as the charge-trapping layer on the performance of 2D van der Waals (vdW) heterostructure-based flash memory devices, where a metallic 1T'-MoTe2 or semiconducting 2H-MoTe2 nanoflake is used as the floating gate. By conducting comprehensive measurements on the two kinds of vdW heterostructure-based devices, the memory device based on MoS2/h-BN/1T'-MoTe2 presents much better performance, including a larger memory window, faster switching speed (100 ns), and higher extinction ratio (107), than that of the device based on the MoS2/h-BN/2H-MoTe2 heterostructure. Moreover, the device based on the MoS2/h-BN/1T'-MoTe2 heterostructure also shows a long cycle (>1200 cycles) and retention (>3000 s) stability. Our study clearly demonstrates that the crystal phase of 2D TMDs has a significant impact on the performance of nonvolatile flash memory devices based on 2D vdW heterostructures, which paves the way for the fabrication of future high-performance memory devices based on 2D materials.-
dc.languageeng-
dc.relation.ispartofACS applied materials &amp; interfaces-
dc.subject2D van der Waals heterostructures-
dc.subjectcrystal phase-
dc.subjectflash memory devices-
dc.subjectfloating gate-
dc.subjectMoTe2 nanosheets-
dc.titleUncovering the Role of Crystal Phase in Determining Nonvolatile Flash Memory Device Performance Fabricated from MoTe<inf>2</inf>-Based 2D van der Waals Heterostructures-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acsami.3c06316-
dc.identifier.pmid37459597-
dc.identifier.scopuseid_2-s2.0-85166363495-
dc.identifier.volume15-
dc.identifier.issue29-
dc.identifier.spage35196-
dc.identifier.epage35205-
dc.identifier.eissn1944-8252-
dc.identifier.isiWOS:001030474000001-

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