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Browsing "Department of Electrical & Electronic Engineering" by Author hsu, cc
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Showing results 1 to 20 of 22
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Title
Author(s)
Issue Date
Views
Carbon-doped GaInP/GaAs double heterostructure-emitter bipolar transistors with high current gain
Journal:
IEEE Transactions on Electron Devices
Yang, YF
Hsu, CC
Yang, ES
1995
160
Carbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gas
Journal:
Applied Physics Letters
Hsu, CC
Yang, YF
Ou, HJ
Yang, ES
Lo, HB
1997
99
CCl4-doped semi-insulating InP as a buffer layer in GaInAs/InP high electron mobility transistors
Journal:
Applied Physics Letters
Hsu, CC
Yang, YF
Ou, HJ
Yang, ES
1996
140
Current transport mechanism in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors
Journal:
Applied Physics Letters
Yan, BP
Hsu, CC
Wang, XQ
Yang, ES
2004
Fabrication and characteristics of a GaInP/GaAs heterojunction bipolar transistor using a selective buried sub-collector
Journal:
IEEE Transactions on Electron Devices
Yang, YF
Hsu, CC
Ou, HJ
Huang, TC
Yang, ES
1997
205
High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors with advanced thermal management
Journal:
IEEE Transactions on Electron Devices
Yan, BP
Yang, ES
Yang, YF
Wang, XQ
Hsu, CC
2003
138
High frequency and low noise C-doped GalnP/GaAs heterojunction bipolar transistor grown by MOCVD using TBA and TBP
Journal:
Electronics Letters
Yang, YF
Hsu, CC
Yang, ES
1996
90
High frequency GalnP/GaAs heterostructure-emitter bipolar transistor with low offset voltage
Journal:
Electronics Letters
Ou, HJ
Hsu, CC
Yang, YF
Yang, ES
1997
97
A high-frequency GaInP/GaAs heterojunction bipolar transistor with reduced base-collector capacitance using a selective buried sub-collector
Journal:
IEEE Electron Device Letters
Yang, YF
Hsu, CC
Yang, ES
Ou, HJ
1996
188
InGaP/GaAs power heterostructure-emitter bipolar transistor
Journal:
Electronics Letters
Yan, BP
Yang, ES
Yang, YF
Wang, XQ
Hsu, CC
2001
165
InGaP/GaAs0.94Sb<0.06>/GaAs double heterojunction bipolar transistor
Journal:
Electronics Letters
Yan, BP
Hsu, CC
Wang, XQ
Yang, ES
2002
163
InGaP/GaAsSb/GaAs DHBTs with low turn-on voltage and high current gain
Proceeding/Conference:
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Yan, BP
Hsu, CC
Wang, XQ
Bai, YK
Yang, ES
2002
190
Integration of GaInP/GaAs heterojunction bipolar transistors and high electron mobility transistors
Journal:
IEEE Electron Device Letters
Yang, YF
Hsu, CC
Yang, ES
1996
Low turn-on voltage InGaP/GaAsSb/GaAs double HBTs grown by MOCVD
Journal:
IEEE Electron Device Letters
Yan, BP
Hsu, CC
Wang, XQ
Yang, ES
2002
Modeling of current gain's temperature dependence in heterostructure-emitter bipolar transistors
Journal:
IEEE Transactions on Electron Devices
Yang, ES
Hsu, CC
Lo, HB
Yang, YF
2000
174
Novel InGaP/GaAsSb/GaAs DHBTs
Cheung, CC
Yan, BP
Hsu, CC
Yang, ES
2003
109
Prevention of base dopant out-diffusion using a heterostructure-emitter in GaInP/GaAs heterojunction bipolar transistors
Journal:
Semiconductor Science and Technology
Yang, YF
Hsu, CC
Yang, ES
1995
Pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP HEMT grown by MOVPE using TBP and TBA
Journal:
Electronics Letters
Yang, YF
Hsu, CC
Yang, ES
1994
186
A reliability comparison of InGaP/GaAs HBTs with and without passivation ledge
Journal:
Microelectronics Reliability
Van, BP
Yang, YF
Hsu, CC
Lo, HB
Yang, ES
2001
155
Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors
Journal:
IEEE Transactions on Electron Devices
Yang, YF
Hsu, CC
Yang, ES
1994
161