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Showing results 1 to 10 of 10

	Title	Author(s)	Issue Date
	A Tantalum Disulfide Charge-Density-Wave Stochastic Artificial Neuron for Emulating Neural Statistical Properties Journal:Nano Letters	Liu, Hefei Wu, Tong Yan, Xiaodong Wu, Jiangbin Wang, Nan Du, Zhonghao Yang, Hao Chen, Buyun Zhang, Zhihan Liu, Fanxin Wu, Wei Guo, Jing Wang, Han	2021
	Ab Initio Computational Screening and Performance Assessment of van der Waals and Semimetallic Contacts to Monolayer WSe<inf>2</inf>P-Type Field-Effect Transistors Journal:IEEE Transactions on Electron Devices	Yang, Ning Lin, Yuxuan Cosmi Chuu, Chih Piao Rahman, M. Saifur Wu, Tong Chou, Ang Sheng Chen, Hung Yu Woon, Wei Yen Liao, Szuya Sandy Huang, Shengxi Qian, Xiaofeng Guo, Jing Radu, Iuliana Wong, H. S.Philip Wang, Han	2023
	Atomically Thin CBRAM Enabled by 2-D Materials: Scaling Behaviors and Performance Limits Journal:IEEE Transactions on Electron Devices	Dong, Zhipeng Zhao, Huan DIMarzio, Don Han, Myung Geun Zhang, Lihua Tice, Jesse Wang, Han Guo, Jing	2018
	Atomically Thin Femtojoule Memristive Device Journal:Advanced Materials	Zhao, Huan Dong, Zhipeng Tian, He DiMarzi, Don Han, Myung Geun Zhang, Lihua Yan, Xiaodong Liu, Fanxin Shen, Lang Han, Shu Jen Cronin, Steve Wu, Wei Tice, Jesse Guo, Jing Wang, Han	2017
	Circuit-Level Memory Technologies and Applications based on 2D Materials Journal:Advanced Materials	Ma, Jiahui Liu, Hefei Yang, Ning Zou, Jingyi Lin, Sen Zhang, Yuhao Zhang, Xu Guo, Jing Wang, Han	2022
	Computational Screening and Multiscale Simulation of Barrier-Free Contacts for 2D Semiconductor pFETs Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Yang, Ning Lin, Yuxuan Cosmi Chuu, Chih Piao Rahman, Saifur Wu, Tong Chou, Ang Sheng Liew, San Lin Fujiwara, Kohei Chen, Hung Yu Ikeda, Junya Tsukazaki, Atsushi Hou, Duen Huei Woon, Wei Yen Liao, Szuya Huang, Shengxi Qian, Xiaofeng Guo, Jing Radu, Iuliana Philip Wong, H. S.Wang, Han	2022
	Contact Engineering for High-Performance N-Type 2D Semiconductor Transistors Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Lin, Y.Shen, P. C.Su, C.Chou, A. S.Wu, T.Cheng, C. C.Park, J. H.Chiu, M. H.Lu, A. Y.Tang, H. L.Tavakoli, M. M.Pitner, G.Ji, X.McGahan, C.Wang, X.Cai, Z.Mao, N.Wang, J.Wang, Y.Tisdale, W.Ling, X.Aidala, K. E.Tung, V.Li, J.Zettl, A.Wu, C. I.Guo, Jing Wang, H.Bokor, J.Palacios, T.Li, L. J.Kong, J.	2021
	Emulating Bilingual Synaptic Response Using a Junction-Based Artificial Synaptic Device Journal:ACS Nano	Tian, He Cao, Xi Xie, Yujun Yan, Xiaodong Kostelec, Andrew Dimarzio, Don Chang, Cheng Zhao, Li Dong Wu, Wei Tice, Jesse Cha, Judy J.Guo, Jing Wang, Han	2017
	High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation Journal:Nature Electronics	Wu, Jiangbin Chen, Hung Yu Yang, Ning Cao, Jun Yan, Xiaodong Liu, Fanxin Sun, Qibin Ling, Xi Guo, Jing Wang, Han	2020
	Reconfigurable Stochastic neurons based on tin oxide/MoS<inf>2</inf> hetero-memristors for simulated annealing and the Boltzmann machine Journal:Nature Communications	Yan, Xiaodong Ma, Jiahui Wu, Tong Zhang, Aoyang Wu, Jiangbin Chin, Matthew Zhang, Zhihan Dubey, Madan Wu, Wei Chen, Mike Shuo Wei Guo, Jing Wang, Han	2021

Showing results 1 to 10 of 10