File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: Computational Screening and Multiscale Simulation of Barrier-Free Contacts for 2D Semiconductor pFETs

TitleComputational Screening and Multiscale Simulation of Barrier-Free Contacts for 2D Semiconductor pFETs
Authors
Issue Date2022
Citation
Technical Digest - International Electron Devices Meeting, IEDM, 2022, v. 2022-December, p. 2811-2814 How to Cite?
AbstractLow-resistance p-type contacts to two-dimensional (2D) semiconductors remains a critical challenge towards the industrial application of 2D channel materials in advanced logic technology. To address this challenge, we computationally screen and identify designs for ultralow-resistance p-type contacts to 2D semiconductors such as WSe2 by combining ab initio density-functional-theory (DFT) and quantum device simulations. Two new contact strategies, van der Waals metallic contact (such as 1H-NbS2), and bulk semimetallic contact (such as Co3 Sn2 S2), are identified as realistic pathways to achieving Schottky-barrier-free and low-contact-resistance p-type contacts for 2D semiconductor pFETs. Simulations of these new strategies suggest reduced metal-induced gap states, negligible Schottky barrier height and small contact resistance (down to 20 Ω·μm). Preliminary experimental results in developing Co3 Sn2 S2 as a new semimetal contact material are also demonstrated.
Persistent Identifierhttp://hdl.handle.net/10722/335439
ISSN
2023 SCImago Journal Rankings: 1.047
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorYang, Ning-
dc.contributor.authorLin, Yuxuan Cosmi-
dc.contributor.authorChuu, Chih Piao-
dc.contributor.authorRahman, Saifur-
dc.contributor.authorWu, Tong-
dc.contributor.authorChou, Ang Sheng-
dc.contributor.authorLiew, San Lin-
dc.contributor.authorFujiwara, Kohei-
dc.contributor.authorChen, Hung Yu-
dc.contributor.authorIkeda, Junya-
dc.contributor.authorTsukazaki, Atsushi-
dc.contributor.authorHou, Duen Huei-
dc.contributor.authorWoon, Wei Yen-
dc.contributor.authorLiao, Szuya-
dc.contributor.authorHuang, Shengxi-
dc.contributor.authorQian, Xiaofeng-
dc.contributor.authorGuo, Jing-
dc.contributor.authorRadu, Iuliana-
dc.contributor.authorPhilip Wong, H. S.-
dc.contributor.authorWang, Han-
dc.date.accessioned2023-11-17T08:25:54Z-
dc.date.available2023-11-17T08:25:54Z-
dc.date.issued2022-
dc.identifier.citationTechnical Digest - International Electron Devices Meeting, IEDM, 2022, v. 2022-December, p. 2811-2814-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10722/335439-
dc.description.abstractLow-resistance p-type contacts to two-dimensional (2D) semiconductors remains a critical challenge towards the industrial application of 2D channel materials in advanced logic technology. To address this challenge, we computationally screen and identify designs for ultralow-resistance p-type contacts to 2D semiconductors such as WSe2 by combining ab initio density-functional-theory (DFT) and quantum device simulations. Two new contact strategies, van der Waals metallic contact (such as 1H-NbS2), and bulk semimetallic contact (such as Co3 Sn2 S2), are identified as realistic pathways to achieving Schottky-barrier-free and low-contact-resistance p-type contacts for 2D semiconductor pFETs. Simulations of these new strategies suggest reduced metal-induced gap states, negligible Schottky barrier height and small contact resistance (down to 20 Ω·μm). Preliminary experimental results in developing Co3 Sn2 S2 as a new semimetal contact material are also demonstrated.-
dc.languageeng-
dc.relation.ispartofTechnical Digest - International Electron Devices Meeting, IEDM-
dc.titleComputational Screening and Multiscale Simulation of Barrier-Free Contacts for 2D Semiconductor pFETs-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IEDM45625.2022.10019377-
dc.identifier.scopuseid_2-s2.0-85147536005-
dc.identifier.volume2022-December-
dc.identifier.spage2811-
dc.identifier.epage2814-
dc.identifier.isiWOS:000968800700035-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats