Browsing "Department of Electrical & Electronic Engineering" by Author fleischer, s

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Showing results 1 to 9 of 9
TitleAuthor(s)Issue Date
 
Effects of nitridation and re-oxidation on drain leakage current in n-channel MOSFETs
Proceeding/Conference:Conference on Solid State Devices and Materials
Fleischer, SLiu, ZHLai, PTMa, ZJCheng, YC
1990
 
Effects of nitridation temperature on the electron trap characteristics of nitrided-oxide metal-oxide-semiconductor capacitors
Journal:Journal of Applied Physics
Fleischer, SLai, PTCheng, YC
1993
 
Impact of nitridation/reoxidation on performance degradation in n-MOSFETs under Fowler-Nordheim injection
Journal:Solid-State Electronics
Ma, ZJLiu, ZHLai, PTFleischer, SCheng, YC
1992
 
A new method for extracting the trap energy in insulators
Journal:Journal of Applied Physics
Fleischer, SLai, PTCheng, YC
1993
 
Off-state leakage currents in n-channel metal-oxide-semiconductor field-effect transistors with 10-nm thermally nitrided and reoxidized nitrided oxides as the gate dielectric
Journal:Applied Physics Letters
Fleischer, SLiu, ZHLai, PTKo, PKCheng, YC
1991
 
Simplified closed-form trap-assisted tunneling model applied to nitrided oxide dielectric capacitors
Journal:Journal of Applied Physics
Fleischer, SLai, PTCheng, YC
1992
 
The influence of ion implantation on the off-state leakage characteristics of n-MOSFETs with ultrathin oxide, nitrided-oxide and re-oxidized nitrided-oxide gate dielectrics
Proceeding/Conference:International Conference on VLSI and CAD Proceedings
Fleischer, SLai, PTCheng, YC
1993
 
Trap-assisted conduction in nitrided-oxide and re-oxidized nitrided-oxide n-channel metal-oxide-semiconductor field-effect transistors
Journal:Journal of Applied Physics
Fleischer, SLai, PTCheng, YC
1993
 
Tunneling-injection-induced turnaround behavior of threshold voltage in thermally nitrided oxide n-channel metal-oxide-semiconductor field-effect transistors
Journal:Journal of Applied Physics
Ma, ZJLai, PTLiu, ZHFleischer, SCheng, YC
1990
Showing results 1 to 9 of 9