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Conference Paper: Recent Development in 2D and 3D GaN devices for RF and Power Electronics Applications

TitleRecent Development in 2D and 3D GaN devices for RF and Power Electronics Applications
Authors
Teo, Koon HooChowdhury, NadimZhang, YuhaoPalacios, TomasYamanaka, KojiYamaguchi, Yutaro
Keywords2D and 3D Semiconductor Devices
GaN
Integrated Circuits
Power Electronics
RF
Semiconductor Devices
Issue Date2020
Citation
2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020, 2020, p. 22-24 How to Cite?
DOI: http://dx.doi.org/10.1109/RFIT49453.2020.9226187
AbstractSome recent developments in 2D and 3D GaN devices and their improved performance parameters such as efficiency, fT, linearity, power density and switching speed are briefly outlined. Most of the cases briefed are for applications in RF with one example for power electronics and another for GaN integrated circuit.
Persistent Identifierhttp://hdl.handle.net/10722/352422

 

DC FieldValueLanguage
dc.contributor.authorTeo, Koon Hoo-
dc.contributor.authorChowdhury, Nadim-
dc.contributor.authorZhang, Yuhao-
dc.contributor.authorPalacios, Tomas-
dc.contributor.authorYamanaka, Koji-
dc.contributor.authorYamaguchi, Yutaro-
dc.date.accessioned2024-12-16T03:58:51Z-
dc.date.available2024-12-16T03:58:51Z-
dc.date.issued2020-
dc.identifier.citation2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020, 2020, p. 22-24-
dc.identifier.urihttp://hdl.handle.net/10722/352422-
dc.description.abstractSome recent developments in 2D and 3D GaN devices and their improved performance parameters such as efficiency, fT, linearity, power density and switching speed are briefly outlined. Most of the cases briefed are for applications in RF with one example for power electronics and another for GaN integrated circuit.-
dc.languageeng-
dc.relation.ispartof2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020-
dc.subject2D and 3D Semiconductor Devices-
dc.subjectGaN-
dc.subjectIntegrated Circuits-
dc.subjectPower Electronics-
dc.subjectRF-
dc.subjectSemiconductor Devices-
dc.titleRecent Development in 2D and 3D GaN devices for RF and Power Electronics Applications-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/RFIT49453.2020.9226187-
dc.identifier.scopuseid_2-s2.0-85096621617-
dc.identifier.spage22-
dc.identifier.epage24-

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