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Conference Paper: First Demonstration of High-Sensitivity (NEP<1fWHz-1/2) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic Integration of Ga2O3Photodetectors and Oxide Thin-Film-Transistors

TitleFirst Demonstration of High-Sensitivity (NEP&lt;1fWHz<sup>-1/2</sup>) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic Integration of Ga<inf>2</inf>O<inf>3</inf>Photodetectors and Oxide Thin-Film-Transistors
Authors
Qin, YuanLu, CongyanYu, ZhaoanYao, ZhihongWu, FeihongDong, DanianZhao, XiaolongXu, GuangweiZhang, YuhaoLong, ShibingLi, LingLiu, Ming
KeywordsGa O 2 3
IGZO
image sensor
monolithic
Issue Date2022
Citation
Digest of Technical Papers - Symposium on VLSI Technology, 2022, v. 2022-June, p. 345-346 How to Cite?
DOI: http://dx.doi.org/10.1109/VLSITechnologyandCir46769.2022.9830520
AbstractWe, for the first time, demonstrated a back-illuminated active-matrix deep UV (DUV) image sensor by monolithically integrating an ultra-wide bandgap (UWBG) Ga2O3 photodetector (PD) array and IGZO thin-film-transistors (TFT) based on a low temperature back-end-of-line (BEOL) process. Benefited from the low off-state current of 10-13A, high on/off ratio of 5×108, and high stability of IGZO TFTs, the integrated PD/TFT sensor cell presents super-high sensitivity with NEP down to 1fWHz-1/2 with a high responsivity and specific detectivity of 302A/W and 1.7×1015Jones, respectively. The 32×32 DUV image sensor shows excellent uniformity and demonstrates a superior image recognition ability with light intensity down to 2 W/cm2. This scalable, high-resolution DUV image sensor shows great promise for advanced imaging and machine vision applications.
Persistent Identifierhttp://hdl.handle.net/10722/352300
ISSN
0743-1562
2023 SCImago Journal Rankings: 0.911

 

DC FieldValueLanguage
dc.contributor.authorQin, Yuan-
dc.contributor.authorLu, Congyan-
dc.contributor.authorYu, Zhaoan-
dc.contributor.authorYao, Zhihong-
dc.contributor.authorWu, Feihong-
dc.contributor.authorDong, Danian-
dc.contributor.authorZhao, Xiaolong-
dc.contributor.authorXu, Guangwei-
dc.contributor.authorZhang, Yuhao-
dc.contributor.authorLong, Shibing-
dc.contributor.authorLi, Ling-
dc.contributor.authorLiu, Ming-
dc.date.accessioned2024-12-16T03:57:55Z-
dc.date.available2024-12-16T03:57:55Z-
dc.date.issued2022-
dc.identifier.citationDigest of Technical Papers - Symposium on VLSI Technology, 2022, v. 2022-June, p. 345-346-
dc.identifier.issn0743-1562-
dc.identifier.urihttp://hdl.handle.net/10722/352300-
dc.description.abstractWe, for the first time, demonstrated a back-illuminated active-matrix deep UV (DUV) image sensor by monolithically integrating an ultra-wide bandgap (UWBG) Ga2O3 photodetector (PD) array and IGZO thin-film-transistors (TFT) based on a low temperature back-end-of-line (BEOL) process. Benefited from the low off-state current of 10-13A, high on/off ratio of 5×108, and high stability of IGZO TFTs, the integrated PD/TFT sensor cell presents super-high sensitivity with NEP down to 1fWHz-1/2 with a high responsivity and specific detectivity of 302A/W and 1.7×1015Jones, respectively. The 32×32 DUV image sensor shows excellent uniformity and demonstrates a superior image recognition ability with light intensity down to 2 W/cm2. This scalable, high-resolution DUV image sensor shows great promise for advanced imaging and machine vision applications.-
dc.languageeng-
dc.relation.ispartofDigest of Technical Papers - Symposium on VLSI Technology-
dc.subjectGa O 2 3-
dc.subjectIGZO-
dc.subjectimage sensor-
dc.subjectmonolithic-
dc.titleFirst Demonstration of High-Sensitivity (NEP&lt;1fWHz<sup>-1/2</sup>) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic Integration of Ga<inf>2</inf>O<inf>3</inf>Photodetectors and Oxide Thin-Film-Transistors-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/VLSITechnologyandCir46769.2022.9830520-
dc.identifier.scopuseid_2-s2.0-85135216501-
dc.identifier.volume2022-June-
dc.identifier.spage345-
dc.identifier.epage346-

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