Novel 2000 v Normally-off MOS-HEMTs using AlN/GaN Superlattice Channel

Abstract

We demonstrate for the first time a GaN-based metal oxide semiconductor high electron mobility transistor (MOS-HEMT) with AlN/GaN superlattice (SL) channels. This new channel structure allows for superior voltage blocking capabilities and thermal stability than conventional GaN channels, as well as higher electron mobility than AlGaN channels. State-of-the-art static and dynamic performance has been achieved in this new MOS-HEMT, including a breakdown voltage over 2000 V, a high ON current density of 768 mA/mm, a threshold voltage (VTH) of 1.0 V, a specific on-resistance (RON) of 7.7 mΩ· cm2, thermal stability up to 225 °C and good dynamic RON. These results show the great potential of our novel AlN/GaN-SL-channel MOS-HEMTs for highvoltage and high temperature power switching applications.