File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings

TitleNovel GaN trench MIS barrier Schottky rectifiers with implanted field rings
Authors
Zhang, Y.Sun, M.Liu, Z.Piedra, D.Pan, M.Gao, X.Lin, Y.Zubair, A.Yu, L.Palacios, T.
Issue Date2017
Citation
Technical Digest - International Electron Devices Meeting, IEDM, 2017, p. 10.2.1-10.2.4 How to Cite?
DOI: http://dx.doi.org/10.1109/IEDM.2016.7838386
AbstractWe demonstrate a novel GaN vertical Schottky rectifier with trench MIS structures and trench field rings. The new structure greatly enhanced the reverse blocking characteristics while maintaining a Schottky-like good forward conduction. The reverse leakage current improved beyond 104-fold and the breakdown voltage increased from 400 V to 700 V, while the low turn-on voltage (0.8 V) and on-resistance (2 mΩ·cm2) were retained. High-temperature operation up to 250 oC and fast switching performance were also demonstrated. This new device shows great potential for high-power and high-frequency applications.
Persistent Identifierhttp://hdl.handle.net/10722/352150
ISSN
0163-1918
2023 SCImago Journal Rankings: 1.047
ISI Accession Number ID
WOS:000399108800061

 

DC FieldValueLanguage
dc.contributor.authorZhang, Y.-
dc.contributor.authorSun, M.-
dc.contributor.authorLiu, Z.-
dc.contributor.authorPiedra, D.-
dc.contributor.authorPan, M.-
dc.contributor.authorGao, X.-
dc.contributor.authorLin, Y.-
dc.contributor.authorZubair, A.-
dc.contributor.authorYu, L.-
dc.contributor.authorPalacios, T.-
dc.date.accessioned2024-12-16T03:56:59Z-
dc.date.available2024-12-16T03:56:59Z-
dc.date.issued2017-
dc.identifier.citationTechnical Digest - International Electron Devices Meeting, IEDM, 2017, p. 10.2.1-10.2.4-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10722/352150-
dc.description.abstractWe demonstrate a novel GaN vertical Schottky rectifier with trench MIS structures and trench field rings. The new structure greatly enhanced the reverse blocking characteristics while maintaining a Schottky-like good forward conduction. The reverse leakage current improved beyond 104-fold and the breakdown voltage increased from 400 V to 700 V, while the low turn-on voltage (0.8 V) and on-resistance (2 mΩ·cm2) were retained. High-temperature operation up to 250 oC and fast switching performance were also demonstrated. This new device shows great potential for high-power and high-frequency applications.-
dc.languageeng-
dc.relation.ispartofTechnical Digest - International Electron Devices Meeting, IEDM-
dc.titleNovel GaN trench MIS barrier Schottky rectifiers with implanted field rings-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IEDM.2016.7838386-
dc.identifier.scopuseid_2-s2.0-85014422467-
dc.identifier.spage10.2.1-
dc.identifier.epage10.2.4-
dc.identifier.isiWOS:000399108800061-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats