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Conference Paper: Impacts of fluorine-treatment on E-mode AlGaN/GaN MOS-HEMTs

TitleImpacts of fluorine-treatment on E-mode AlGaN/GaN MOS-HEMTs
Authors
Sun, X.Zhang, Y.Chang-Liao, K. S.Palacios, T.Ma, T. P.
Issue Date2015
Citation
Technical Digest - International Electron Devices Meeting, IEDM, 2015, v. 2015-February, n. February, p. 17.3.1-17.3.4 How to Cite?
DOI: http://dx.doi.org/10.1109/IEDM.2014.7047070
AbstractThe impact of fluorine treatment on AlGaN/GaN MOS-HEMTs has been investigated. Fluorine was found to suppress pre-existing traps in MOS-HEMT, which improves the off-state at high temperatures. Fluorine doping and associated etching, however, also generates slow border traps and fast interface states that degrade the MOS-HEMT performance. Multi-faceted mechanisms for drain current degradation due to F-doping and gate-recess-etch have been investigated in enhancement-mode MOS-HEMTs.
Persistent Identifierhttp://hdl.handle.net/10722/352133
ISSN
0163-1918
2023 SCImago Journal Rankings: 1.047

 

DC FieldValueLanguage
dc.contributor.authorSun, X.-
dc.contributor.authorZhang, Y.-
dc.contributor.authorChang-Liao, K. S.-
dc.contributor.authorPalacios, T.-
dc.contributor.authorMa, T. P.-
dc.date.accessioned2024-12-16T03:56:53Z-
dc.date.available2024-12-16T03:56:53Z-
dc.date.issued2015-
dc.identifier.citationTechnical Digest - International Electron Devices Meeting, IEDM, 2015, v. 2015-February, n. February, p. 17.3.1-17.3.4-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10722/352133-
dc.description.abstractThe impact of fluorine treatment on AlGaN/GaN MOS-HEMTs has been investigated. Fluorine was found to suppress pre-existing traps in MOS-HEMT, which improves the off-state at high temperatures. Fluorine doping and associated etching, however, also generates slow border traps and fast interface states that degrade the MOS-HEMT performance. Multi-faceted mechanisms for drain current degradation due to F-doping and gate-recess-etch have been investigated in enhancement-mode MOS-HEMTs.-
dc.languageeng-
dc.relation.ispartofTechnical Digest - International Electron Devices Meeting, IEDM-
dc.titleImpacts of fluorine-treatment on E-mode AlGaN/GaN MOS-HEMTs-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IEDM.2014.7047070-
dc.identifier.scopuseid_2-s2.0-84938232463-
dc.identifier.volume2015-February-
dc.identifier.issueFebruary-
dc.identifier.spage17.3.1-
dc.identifier.epage17.3.4-

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