Monolithically Integrated Microcavity Lasers on Silicon

Abstract

In recent years, due to the limitation of Moore's Law, traditional electronic integrated circuits have been unable to meet the requirements of exponential growth of data traffic. An optical interconnect paradigm with higher density of processing units and lower energy consumption is urgently needed. Highly integrated III-V lasers on silicon are promising candidates for ultra-compact light sources of the next generation on-chip optical interconnect. Here, we present various InAs/GaAs quantum dot microcavity lasers monolithically grown on silicon, including micro-disk lasers, 2D Photonic Crystal lasers with L3 defects, 1D Photonic Crystal nanobeam lasers, Photonic Crystal bandedge lasers, topological corner state lasers, Dirac-vortex topological lasers and vortex lasers based on bound states in the continuum (BIC).