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Conference Paper: Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS2Transistor

TitleWafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS<inf>2</inf>Transistor
Authors
Issue Date2022
Citation
Digest of Technical Papers - Symposium on VLSI Technology, 2022, v. 2022-June, p. 290-291 How to Cite?
AbstractA novel wafer-scale semi-automated dry transfer process for monolayer (1L) CVD WS2 was developed utilizing the weakly coupled interface between semimetal (Bi) and two-dimensional (2D) semiconductor (WS2). Bi semimetal serves as a gently adhesive transfer template for 2D materials, introducing minimal additional defects during the transfer process. Based on 2D materials processed using this new transfer method, semimetal-contacted (Bi and Sb) monolayer CVD WS2 nFETs were further demonstrated at wafer scale. Our CVD 1L WS2 nFETs fabricated using semimetal-assisted transfer with semimetal (Bi and Sb) contacts show record high on-current of 250 A/m and 243 A/m at VDS = 1 V, and record low contact resistance of 0.63 kOm and 0.73 kOm, respectively.
Persistent Identifierhttp://hdl.handle.net/10722/335403
ISSN
2023 SCImago Journal Rankings: 0.911

 

DC FieldValueLanguage
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorHsu, Ching Hao-
dc.contributor.authorShen, Shin Wei-
dc.contributor.authorChou, Ang Sheng-
dc.contributor.authorLin, Yuxuan Cosmi-
dc.contributor.authorChuu, Chih Piao-
dc.contributor.authorYang, Ning-
dc.contributor.authorChou, Sui An-
dc.contributor.authorHuang, Lin Yun-
dc.contributor.authorCheng, Chao Ching-
dc.contributor.authorWoon, Wei Yen-
dc.contributor.authorLiao, Szuya-
dc.contributor.authorWu, Chih I.-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorRadu, Iuliana-
dc.contributor.authorWong, H. S.Philip-
dc.contributor.authorWang, Han-
dc.date.accessioned2023-11-17T08:25:37Z-
dc.date.available2023-11-17T08:25:37Z-
dc.date.issued2022-
dc.identifier.citationDigest of Technical Papers - Symposium on VLSI Technology, 2022, v. 2022-June, p. 290-291-
dc.identifier.issn0743-1562-
dc.identifier.urihttp://hdl.handle.net/10722/335403-
dc.description.abstractA novel wafer-scale semi-automated dry transfer process for monolayer (1L) CVD WS2 was developed utilizing the weakly coupled interface between semimetal (Bi) and two-dimensional (2D) semiconductor (WS2). Bi semimetal serves as a gently adhesive transfer template for 2D materials, introducing minimal additional defects during the transfer process. Based on 2D materials processed using this new transfer method, semimetal-contacted (Bi and Sb) monolayer CVD WS2 nFETs were further demonstrated at wafer scale. Our CVD 1L WS2 nFETs fabricated using semimetal-assisted transfer with semimetal (Bi and Sb) contacts show record high on-current of 250 A/m and 243 A/m at VDS = 1 V, and record low contact resistance of 0.63 kOm and 0.73 kOm, respectively.-
dc.languageeng-
dc.relation.ispartofDigest of Technical Papers - Symposium on VLSI Technology-
dc.titleWafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS<inf>2</inf>Transistor-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/VLSITechnologyandCir46769.2022.9830376-
dc.identifier.scopuseid_2-s2.0-85135242590-
dc.identifier.volume2022-June-
dc.identifier.spage290-
dc.identifier.epage291-

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