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Conference Paper: 1550 Nm Laser with 320 Hz Lorentzian Linewidth based on Semiconductor Gain Chip and Extended Si3N4 Bragg Grating

Title1550 Nm Laser with 320 Hz Lorentzian Linewidth based on Semiconductor Gain Chip and Extended Si3N4 Bragg Grating
Authors
Issue Date2019
Citation
2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings, 2019, article no. 8749807 How to Cite?
AbstractWe demonstrate narrow linewidth lasers based on a semiconductor gain chip coupled to a Si3N4 Bragg grating. The laser demonstrates 12 mW fiber coupled output power, > 55 dB SMSR and 320 Hz Lorentzian linewidth.
Persistent Identifierhttp://hdl.handle.net/10722/322019

 

DC FieldValueLanguage
dc.contributor.authorXiang, Chao-
dc.contributor.authorMorton, Paul A.-
dc.contributor.authorBowers, John E.-
dc.date.accessioned2022-11-03T02:23:03Z-
dc.date.available2022-11-03T02:23:03Z-
dc.date.issued2019-
dc.identifier.citation2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings, 2019, article no. 8749807-
dc.identifier.urihttp://hdl.handle.net/10722/322019-
dc.description.abstractWe demonstrate narrow linewidth lasers based on a semiconductor gain chip coupled to a Si3N4 Bragg grating. The laser demonstrates 12 mW fiber coupled output power, > 55 dB SMSR and 320 Hz Lorentzian linewidth.-
dc.languageeng-
dc.relation.ispartof2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings-
dc.title1550 Nm Laser with 320 Hz Lorentzian Linewidth based on Semiconductor Gain Chip and Extended Si3N4 Bragg Grating-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.23919/CLEO.2019.8749807-
dc.identifier.scopuseid_2-s2.0-85069212962-
dc.identifier.spagearticle no. 8749807-
dc.identifier.epagearticle no. 8749807-

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