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Conference Paper: Selective intermixing of InGaAs/GaAs/AlGaAs quantum wells with spin-on-glass/MgF2 grating caps

TitleSelective intermixing of InGaAs/GaAs/AlGaAs quantum wells with spin-on-glass/MgF<inf>2</inf> grating caps
Authors
Zhao, Yan RuiYellowhair, JuliusLee, JinhyunZhang, ShuangRaub, Alexander K.Wang, RonghuaVarangis, Petros M.El-Emawy, Abdel RahmanVilela, Mauro F.Osiński, Marek
KeywordsImpurity-free vacancy diffusion
Quantum well intermixing
InGaAs/GaAs quantum wells
Selective intermixing
Issue Date2001
Citation
Proceedings of SPIE - The International Society for Optical Engineering, 2001, v. 4594, p. 144-155 How to Cite?
DOI: http://dx.doi.org/10.1117/12.446541
AbstractThe selective intermixing of InGaAs/GaAs/AlGaAs quantum wells (QW) with spin-on-glass/MgF2 grating caps was studied. The lateral diffusion length of quantum well intermixing (QWI) for samples with double-quantum-well (DQW) located 157 nm from the top surface was estimated to be ∼1.7-1.8 μm. It was found that this value could increase when QW were located deeper beneath the sample surface.
Persistent Identifierhttp://hdl.handle.net/10722/294992
ISSN
0277-786X
2023 SCImago Journal Rankings: 0.152

 

DC FieldValueLanguage
dc.contributor.authorZhao, Yan Rui-
dc.contributor.authorYellowhair, Julius-
dc.contributor.authorLee, Jinhyun-
dc.contributor.authorZhang, Shuang-
dc.contributor.authorRaub, Alexander K.-
dc.contributor.authorWang, Ronghua-
dc.contributor.authorVarangis, Petros M.-
dc.contributor.authorEl-Emawy, Abdel Rahman-
dc.contributor.authorVilela, Mauro F.-
dc.contributor.authorOsiński, Marek-
dc.date.accessioned2021-01-05T04:58:50Z-
dc.date.available2021-01-05T04:58:50Z-
dc.date.issued2001-
dc.identifier.citationProceedings of SPIE - The International Society for Optical Engineering, 2001, v. 4594, p. 144-155-
dc.identifier.issn0277-786X-
dc.identifier.urihttp://hdl.handle.net/10722/294992-
dc.description.abstractThe selective intermixing of InGaAs/GaAs/AlGaAs quantum wells (QW) with spin-on-glass/MgF2 grating caps was studied. The lateral diffusion length of quantum well intermixing (QWI) for samples with double-quantum-well (DQW) located 157 nm from the top surface was estimated to be ∼1.7-1.8 μm. It was found that this value could increase when QW were located deeper beneath the sample surface.-
dc.languageeng-
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineering-
dc.subjectImpurity-free vacancy diffusion-
dc.subjectQuantum well intermixing-
dc.subjectInGaAs/GaAs quantum wells-
dc.subjectSelective intermixing-
dc.titleSelective intermixing of InGaAs/GaAs/AlGaAs quantum wells with spin-on-glass/MgF<inf>2</inf> grating caps-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1117/12.446541-
dc.identifier.scopuseid_2-s2.0-18644381885-
dc.identifier.volume4594-
dc.identifier.spage144-
dc.identifier.epage155-
dc.identifier.issnl0277-786X-

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