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Conference Paper: CMOS-integrated nanoscale memristive crossbars for CNN and optimization acceleration

TitleCMOS-integrated nanoscale memristive crossbars for CNN and optimization acceleration
Authors
KeywordsIn-memory computing
Analog computing
Non-volatile memory
Memristor
Neural networks
Issue Date2020
Citation
2020 IEEE International Memory Workshop, IMW 2020 - Proceedings, 2020 How to Cite?
Abstract© 2020 IEEE. While memristive crossbars have been reported to offer substantial performance efficiency benefits orders of magnitude above digital processors, there remain high risks in analog computing platforms using emerging non-volatile memory technologies, primarily due to device performance, variability, yield, and interactions with peripheral circuits. We directly integrated CMOS and nanoscale (down to 25 nm) memristors for fully on-chip reading/programming/computing demonstrations. We operate in a low power regime, program with fine control, showing high yield and low variability across our memristive arrays. With the integrated chip, we successfully demonstrated a multi-layer convolutional neural network with MNIST classification accuracy of above 95.3%, demonstrating several concepts in proposed architectures for hybrid analog-digital computing. The ability to tackle NP-hard optimization problems is also experimentally demonstrated with this platform. This work derisks many of the chief concerns for an accelerator based on analog rather than purely digital computing circuits, as well as validating the core elements of a future in-memory computing architecture.
Persistent Identifierhttp://hdl.handle.net/10722/287035

 

DC FieldValueLanguage
dc.contributor.authorLi, Can-
dc.contributor.authorIgnowski, Jim-
dc.contributor.authorSheng, Xia-
dc.contributor.authorWessel, Rob-
dc.contributor.authorJaffe, Bill-
dc.contributor.authorIngemi, Jacqui-
dc.contributor.authorGraves, Cat-
dc.contributor.authorStrachan, John Paul-
dc.date.accessioned2020-09-07T11:46:19Z-
dc.date.available2020-09-07T11:46:19Z-
dc.date.issued2020-
dc.identifier.citation2020 IEEE International Memory Workshop, IMW 2020 - Proceedings, 2020-
dc.identifier.urihttp://hdl.handle.net/10722/287035-
dc.description.abstract© 2020 IEEE. While memristive crossbars have been reported to offer substantial performance efficiency benefits orders of magnitude above digital processors, there remain high risks in analog computing platforms using emerging non-volatile memory technologies, primarily due to device performance, variability, yield, and interactions with peripheral circuits. We directly integrated CMOS and nanoscale (down to 25 nm) memristors for fully on-chip reading/programming/computing demonstrations. We operate in a low power regime, program with fine control, showing high yield and low variability across our memristive arrays. With the integrated chip, we successfully demonstrated a multi-layer convolutional neural network with MNIST classification accuracy of above 95.3%, demonstrating several concepts in proposed architectures for hybrid analog-digital computing. The ability to tackle NP-hard optimization problems is also experimentally demonstrated with this platform. This work derisks many of the chief concerns for an accelerator based on analog rather than purely digital computing circuits, as well as validating the core elements of a future in-memory computing architecture.-
dc.languageeng-
dc.relation.ispartof2020 IEEE International Memory Workshop, IMW 2020 - Proceedings-
dc.subjectIn-memory computing-
dc.subjectAnalog computing-
dc.subjectNon-volatile memory-
dc.subjectMemristor-
dc.subjectNeural networks-
dc.titleCMOS-integrated nanoscale memristive crossbars for CNN and optimization acceleration-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IMW48823.2020.9108112-
dc.identifier.scopuseid_2-s2.0-85086987091-
dc.identifier.spagenull-
dc.identifier.epagenull-

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