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Conference Paper: In-Memory Computing with Memristor Arrays

TitleIn-Memory Computing with Memristor Arrays
Authors
KeywordsIn-memory computing
Memristor
Neural network
Online learning
RRAM
Issue Date2018
Citation
2018 IEEE 10th International Memory Workshop, IMW 2018, 2018, p. 1-4 How to Cite?
Abstract© 2018 IEEE. Memristors with tunable non-volatile resistance states offer the potential for in-memory computing that mitigates the von-Neumann bottleneck. We build a large scale memristor array by integrating a transistor array with Ta/HfO2 memristors that have stable multilevel resistance states and linear IV characteristic. With off-chip peripheral driving circuits, the memristor chip is capable of high-precision analog computing and online learning. We demonstrate a weight-update scheme that provides linear and symmetric potentiation and depression with no more than two pulses for each cell. We train the array as a single-layer fully-connected feedforward neural network for the WDBC data base and achieve 98% classification accuracy. We further partition the array into a two-layer network, which achieves 91.71% classification accuracy for MNIST database experimentally. The system demonstrates high defect tolerance and excellent speed-energy efficiency.
Persistent Identifierhttp://hdl.handle.net/10722/286969

 

DC FieldValueLanguage
dc.contributor.authorLi, Can-
dc.contributor.authorBelkin, Daniel-
dc.contributor.authorLi, Yunning-
dc.contributor.authorYan, Peng-
dc.contributor.authorHu, Miao-
dc.contributor.authorGe, Ning-
dc.contributor.authorJiang, Hao-
dc.contributor.authorMontgomery, Eric-
dc.contributor.authorLin, Peng-
dc.contributor.authorWang, Zhonguir-
dc.contributor.authorStrachan, John Paul-
dc.contributor.authorBarnell, Mark-
dc.contributor.authorWu, Qing-
dc.contributor.authorWilliams, R. Stanley-
dc.contributor.authorYang, J. Joshua-
dc.contributor.authorXia, Qiangfei-
dc.date.accessioned2020-09-07T11:46:09Z-
dc.date.available2020-09-07T11:46:09Z-
dc.date.issued2018-
dc.identifier.citation2018 IEEE 10th International Memory Workshop, IMW 2018, 2018, p. 1-4-
dc.identifier.urihttp://hdl.handle.net/10722/286969-
dc.description.abstract© 2018 IEEE. Memristors with tunable non-volatile resistance states offer the potential for in-memory computing that mitigates the von-Neumann bottleneck. We build a large scale memristor array by integrating a transistor array with Ta/HfO2 memristors that have stable multilevel resistance states and linear IV characteristic. With off-chip peripheral driving circuits, the memristor chip is capable of high-precision analog computing and online learning. We demonstrate a weight-update scheme that provides linear and symmetric potentiation and depression with no more than two pulses for each cell. We train the array as a single-layer fully-connected feedforward neural network for the WDBC data base and achieve 98% classification accuracy. We further partition the array into a two-layer network, which achieves 91.71% classification accuracy for MNIST database experimentally. The system demonstrates high defect tolerance and excellent speed-energy efficiency.-
dc.languageeng-
dc.relation.ispartof2018 IEEE 10th International Memory Workshop, IMW 2018-
dc.subjectIn-memory computing-
dc.subjectMemristor-
dc.subjectNeural network-
dc.subjectOnline learning-
dc.subjectRRAM-
dc.titleIn-Memory Computing with Memristor Arrays-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IMW.2018.8388838-
dc.identifier.scopuseid_2-s2.0-85050032031-
dc.identifier.spage1-
dc.identifier.epage4-

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