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- Publisher Website: 10.1109/CNNA.2014.6888616
- Scopus: eid_2-s2.0-84907743599
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Conference Paper: Switching layer engineering for memristive devices
Title | Switching layer engineering for memristive devices |
---|---|
Authors | |
Keywords | bilayer devices SiOx devices switching layer reactive sputtering memristor |
Issue Date | 2014 |
Citation | International Workshop on Cellular Nanoscale Networks and their Applications, 2014 How to Cite? |
Abstract | © 2014 IEEE. We used reactive sputtering as a tool to deposit transition metal oxide materials with tunable chemical composition and electrical properties. We further developed heterogeneous bilayer memristive devices with designed switching properties. Finally, we developed a low voltage memristive based on chemically produced, 1 nm thick silicon oxide. |
Persistent Identifier | http://hdl.handle.net/10722/286896 |
ISSN | 2020 SCImago Journal Rankings: 0.118 |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jiang, Hao | - |
dc.contributor.author | Li, Can | - |
dc.contributor.author | Xia, Qiangfei | - |
dc.date.accessioned | 2020-09-07T11:45:57Z | - |
dc.date.available | 2020-09-07T11:45:57Z | - |
dc.date.issued | 2014 | - |
dc.identifier.citation | International Workshop on Cellular Nanoscale Networks and their Applications, 2014 | - |
dc.identifier.issn | 2165-0160 | - |
dc.identifier.uri | http://hdl.handle.net/10722/286896 | - |
dc.description.abstract | © 2014 IEEE. We used reactive sputtering as a tool to deposit transition metal oxide materials with tunable chemical composition and electrical properties. We further developed heterogeneous bilayer memristive devices with designed switching properties. Finally, we developed a low voltage memristive based on chemically produced, 1 nm thick silicon oxide. | - |
dc.language | eng | - |
dc.relation.ispartof | International Workshop on Cellular Nanoscale Networks and their Applications | - |
dc.subject | bilayer devices | - |
dc.subject | SiOx devices | - |
dc.subject | switching layer | - |
dc.subject | reactive sputtering | - |
dc.subject | memristor | - |
dc.title | Switching layer engineering for memristive devices | - |
dc.type | Conference_Paper | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/CNNA.2014.6888616 | - |
dc.identifier.scopus | eid_2-s2.0-84907743599 | - |
dc.identifier.spage | null | - |
dc.identifier.epage | null | - |
dc.identifier.eissn | 2165-0179 | - |
dc.identifier.issnl | 2165-0160 | - |