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Conference Paper: Oxide-based RRAM: A novel defect-engineering-based implementation for multilevel data storage

TitleOxide-based RRAM: A novel defect-engineering-based implementation for multilevel data storage
Authors
Kang, J. F.Gao, B.Chen, B.Liu, L. F.Liu, X. Y.Yu, H. Y.Wang, Z. R.Yu, B.
Keywordsmultilevel data storage
Resistive switching memory (RRAM)
defect-engineering
Issue Date2012
Citation
2012 4th IEEE International Memory Workshop, IMW 2012, 2012 How to Cite?
DOI: http://dx.doi.org/10.1109/IMW.2012.6213664
AbstractA novel strategy based on defect engineering is proposed for high-performance multilevel data storage in oxide-based resistive random access memory (RRAM). Key innovations are (i) material-oriented cell engineering for desired modification of physical locations of generated oxygen vacancies in resistive switching layer and (ii) innovative operation scheme to control the distribution of oxygen vacancy conducting filaments during the switching. Excellent memory performance with four-level data storage is successfully demonstrated in hafnium-oxide-based RRAM devices, indicating the viability of the proposed engineering design strategy. © 2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/286874

 

DC FieldValueLanguage
dc.contributor.authorKang, J. F.-
dc.contributor.authorGao, B.-
dc.contributor.authorChen, B.-
dc.contributor.authorLiu, L. F.-
dc.contributor.authorLiu, X. Y.-
dc.contributor.authorYu, H. Y.-
dc.contributor.authorWang, Z. R.-
dc.contributor.authorYu, B.-
dc.date.accessioned2020-09-07T11:45:54Z-
dc.date.available2020-09-07T11:45:54Z-
dc.date.issued2012-
dc.identifier.citation2012 4th IEEE International Memory Workshop, IMW 2012, 2012-
dc.identifier.urihttp://hdl.handle.net/10722/286874-
dc.description.abstractA novel strategy based on defect engineering is proposed for high-performance multilevel data storage in oxide-based resistive random access memory (RRAM). Key innovations are (i) material-oriented cell engineering for desired modification of physical locations of generated oxygen vacancies in resistive switching layer and (ii) innovative operation scheme to control the distribution of oxygen vacancy conducting filaments during the switching. Excellent memory performance with four-level data storage is successfully demonstrated in hafnium-oxide-based RRAM devices, indicating the viability of the proposed engineering design strategy. © 2012 IEEE.-
dc.languageeng-
dc.relation.ispartof2012 4th IEEE International Memory Workshop, IMW 2012-
dc.subjectmultilevel data storage-
dc.subjectResistive switching memory (RRAM)-
dc.subjectdefect-engineering-
dc.titleOxide-based RRAM: A novel defect-engineering-based implementation for multilevel data storage-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IMW.2012.6213664-
dc.identifier.scopuseid_2-s2.0-84864137324-
dc.identifier.spagenull-
dc.identifier.epagenull-

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