Bias temperature instability of binary oxide based reram

Abstract

Bias temperature instability of TiN/HfOx/Pt resistive random access memory (ReRAM) device is investigated in this work for the first time. As temperature increases (up to 100oC in this work), it is observed that: 1) leakage current at high resistance state (HRS) increases, which can be explained by the higher density of traps inside dielectrics (related to trap-assistant tunneling), leading to a lower On/Off ratio; 2) set and reset voltages decrease, which may be attributed to the higher oxygen ion mobility, in addition to the reduced potential barrier to create / recover oxygen ions (or oxygen vacancies); 3) electrical stress plays a negligible role as compared to the temperature impact on the ReRAM degradation; and 4) multi-level switching behavior exhibited at room temperature might not be retained. © 2010 IEEE.