File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1109/SENSOR.2009.5285843
- Scopus: eid_2-s2.0-71549131012
Supplementary
-
Citations:
- Scopus: 0
- Appears in Collections:
Conference Paper: Stress-assistant selective etching mechanism for lithography-independent nanofabrication
Title | Stress-assistant selective etching mechanism for lithography-independent nanofabrication |
---|---|
Authors | |
Keywords | Nanofabrication Stress-assistant selective etching Stress introducing Focused ion beam |
Issue Date | 2009 |
Citation | TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems, 2009, p. 1317-1320 How to Cite? |
Abstract | We report a novel stress-assistant selective etching (SASE) mechanism for nanofabrication, which is discovered that tensile stress can increase dry-etching rate. By introducing patterned stress, this mechanism can realize selective etching, and be used to achieve nanostructures independent of lithography. Based on the mechanism, we employ focused ion beam (FIB) to introduce stress while milling, and successfully fabricate a sub-100 nm nano-pore and a shuttle-shaped structure with 10 nm nano-cantilevers on a 96.9 nm-thick crystal-silicon film without restrictions of lithography as well as the precision of FIB-processing. Using the SASE mechanism with stress distribution patterns, we are possible to acquire desired nanostructures. ©2009 IEEE. |
Persistent Identifier | http://hdl.handle.net/10722/286850 |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ding, F. | - |
dc.contributor.author | Ni, C. | - |
dc.contributor.author | Yu, W. X. | - |
dc.contributor.author | Li, C. | - |
dc.contributor.author | Wu, W. G. | - |
dc.contributor.author | Xu, J. | - |
dc.date.accessioned | 2020-09-07T11:45:50Z | - |
dc.date.available | 2020-09-07T11:45:50Z | - |
dc.date.issued | 2009 | - |
dc.identifier.citation | TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems, 2009, p. 1317-1320 | - |
dc.identifier.uri | http://hdl.handle.net/10722/286850 | - |
dc.description.abstract | We report a novel stress-assistant selective etching (SASE) mechanism for nanofabrication, which is discovered that tensile stress can increase dry-etching rate. By introducing patterned stress, this mechanism can realize selective etching, and be used to achieve nanostructures independent of lithography. Based on the mechanism, we employ focused ion beam (FIB) to introduce stress while milling, and successfully fabricate a sub-100 nm nano-pore and a shuttle-shaped structure with 10 nm nano-cantilevers on a 96.9 nm-thick crystal-silicon film without restrictions of lithography as well as the precision of FIB-processing. Using the SASE mechanism with stress distribution patterns, we are possible to acquire desired nanostructures. ©2009 IEEE. | - |
dc.language | eng | - |
dc.relation.ispartof | TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems | - |
dc.subject | Nanofabrication | - |
dc.subject | Stress-assistant selective etching | - |
dc.subject | Stress introducing | - |
dc.subject | Focused ion beam | - |
dc.title | Stress-assistant selective etching mechanism for lithography-independent nanofabrication | - |
dc.type | Conference_Paper | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/SENSOR.2009.5285843 | - |
dc.identifier.scopus | eid_2-s2.0-71549131012 | - |
dc.identifier.spage | 1317 | - |
dc.identifier.epage | 1320 | - |