File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1109/ISNE.2016.7543340
- Scopus: eid_2-s2.0-84985993382
Supplementary
-
Citations:
- Scopus: 0
- Appears in Collections:
Conference Paper: A numerical investigation on effects of lateral Si/SiO2 interface traps on magnetic sensitivity of sectorial SD-MAGFET
| Title | A numerical investigation on effects of lateral Si/SiO2 interface traps on magnetic sensitivity of sectorial SD-MAGFET |
|---|---|
| Authors | |
| Keywords | Interface traps Magnetic sensitivity Sectorial SD-MAGFETs Si/SiO2 interface |
| Issue Date | 2016 |
| Publisher | IEEE. |
| Citation | The 5th International Symposium on Next-Generation Electronics (ISNE 2016), Hsinchu, Taiwan, 4-6 May 2016. In Conference Proceedings, 2016 How to Cite? |
| Abstract | This work studies the influence of the Si/SiO2 interface traps at the sidewall of sectorial SD-MAGFET in detail. Ionized acceptor traps work like negative oxide charges to enhance the magnetic sensing of the device by depleting the conduction channel, but ionized donor traps behave like positive oxide charges to weaken the magnetic sensing by inducing a parasitic channel at the sidewall. In particular, the higher the density of the acceptor or donor traps, the stronger is the effect on the magnetic sensitivity. Moreover, the trap energy also affects the sensitivity, with larger effect for traps lying closer to the valence or conduction band. © 2016 IEEE. |
| Description | Session WIP: paper no. W1P-4-18 |
| Persistent Identifier | http://hdl.handle.net/10722/232323 |
| ISBN |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yang, Z | - |
| dc.contributor.author | Leung, CW | - |
| dc.contributor.author | Lai, PT | - |
| dc.contributor.author | Pong, PWT | - |
| dc.date.accessioned | 2016-09-20T05:29:13Z | - |
| dc.date.available | 2016-09-20T05:29:13Z | - |
| dc.date.issued | 2016 | - |
| dc.identifier.citation | The 5th International Symposium on Next-Generation Electronics (ISNE 2016), Hsinchu, Taiwan, 4-6 May 2016. In Conference Proceedings, 2016 | - |
| dc.identifier.isbn | 978-150902439-1 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/232323 | - |
| dc.description | Session WIP: paper no. W1P-4-18 | - |
| dc.description.abstract | This work studies the influence of the Si/SiO2 interface traps at the sidewall of sectorial SD-MAGFET in detail. Ionized acceptor traps work like negative oxide charges to enhance the magnetic sensing of the device by depleting the conduction channel, but ionized donor traps behave like positive oxide charges to weaken the magnetic sensing by inducing a parasitic channel at the sidewall. In particular, the higher the density of the acceptor or donor traps, the stronger is the effect on the magnetic sensitivity. Moreover, the trap energy also affects the sensitivity, with larger effect for traps lying closer to the valence or conduction band. © 2016 IEEE. | - |
| dc.language | eng | - |
| dc.publisher | IEEE. | - |
| dc.relation.ispartof | International Symposium on Next-Generation Electronics Proceedings | - |
| dc.rights | International Symposium on Next-Generation Electronics Proceedings. Copyright © IEEE. | - |
| dc.rights | ©2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | - |
| dc.subject | Interface traps | - |
| dc.subject | Magnetic sensitivity | - |
| dc.subject | Sectorial SD-MAGFETs | - |
| dc.subject | Si/SiO2 interface | - |
| dc.title | A numerical investigation on effects of lateral Si/SiO2 interface traps on magnetic sensitivity of sectorial SD-MAGFET | - |
| dc.type | Conference_Paper | - |
| dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
| dc.identifier.email | Pong, PWT: ppong@hkucc.hku.hk | - |
| dc.identifier.authority | Lai, PT=rp00130 | - |
| dc.identifier.authority | Pong, PWT=rp00217 | - |
| dc.description.nature | link_to_subscribed_fulltext | - |
| dc.identifier.doi | 10.1109/ISNE.2016.7543340 | - |
| dc.identifier.scopus | eid_2-s2.0-84985993382 | - |
| dc.identifier.hkuros | 265583 | - |
| dc.publisher.place | United States | - |
| dc.customcontrol.immutable | sml 160927 | - |