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Conference Paper: Photo-electro-vibrational-thermal characterization of epi-flexible GaN light-emitting diode

TitlePhoto-electro-vibrational-thermal characterization of epi-flexible GaN light-emitting diode
Authors
Cheung, YFLi, KHHuang, JChoi, HW
Issue Date2015
Citation
The 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August-4 September 2015. How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/232276

 

DC FieldValueLanguage
dc.contributor.authorCheung, YF-
dc.contributor.authorLi, KH-
dc.contributor.authorHuang, J-
dc.contributor.authorChoi, HW-
dc.date.accessioned2016-09-20T05:28:54Z-
dc.date.available2016-09-20T05:28:54Z-
dc.date.issued2015-
dc.identifier.citationThe 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August-4 September 2015.-
dc.identifier.urihttp://hdl.handle.net/10722/232276-
dc.languageeng-
dc.relation.ispartofInternational Conference on Nitride Semiconductors, ICNS-11-
dc.titlePhoto-electro-vibrational-thermal characterization of epi-flexible GaN light-emitting diode-
dc.typeConference_Paper-
dc.identifier.emailCheung, YF: yukfaira@hku.hk-
dc.identifier.emailLi, KH: khei@eee.hku.hk-
dc.identifier.emailHuang, J: jahuang@eee.hku.hk-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.authorityLi, KH=rp02142-
dc.identifier.authorityChoi, HW=rp00108-
dc.identifier.hkuros263491-

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