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Conference Paper: Internal quantum efficiency tuning in metal-oxide-semiconductor InGaN/GaN nanopillars

TitleInternal quantum efficiency tuning in metal-oxide-semiconductor InGaN/GaN nanopillars
Authors
Feng, CHuang, JChoi, HW
Issue Date2014
Citation
The 2014 International Workshop on Nitride Semiconductors (IWN), Wrocław, Poland, 24–29 August 2014. How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/218942

 

DC FieldValueLanguage
dc.contributor.authorFeng, C-
dc.contributor.authorHuang, J-
dc.contributor.authorChoi, HW-
dc.date.accessioned2015-09-18T07:01:38Z-
dc.date.available2015-09-18T07:01:38Z-
dc.date.issued2014-
dc.identifier.citationThe 2014 International Workshop on Nitride Semiconductors (IWN), Wrocław, Poland, 24–29 August 2014.-
dc.identifier.urihttp://hdl.handle.net/10722/218942-
dc.languageeng-
dc.relation.ispartofInternational Workshop on Nitride Semiconductors, IWN 2014-
dc.titleInternal quantum efficiency tuning in metal-oxide-semiconductor InGaN/GaN nanopillars-
dc.typeConference_Paper-
dc.identifier.emailHuang, J: jahuang@eee.hku.hk-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.authorityChoi, HW=rp00108-
dc.identifier.hkuros250320-

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