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Conference Paper: Hydrothermal synthesis of ZnO nanorods for Schottky diode hydrogen gas sensor

TitleHydrothermal synthesis of ZnO nanorods for Schottky diode hydrogen gas sensor
Authors
Issue Date2014
Citation
The 13th IEEE Sensors Conference (SENSORS 2014), Valencia, Spain, 2-5 November 2014. How to Cite?
AbstractHighly aligned zinc oxide (ZnO) nanorods have been grown on Si substrates by hydrothermal method and characterized with scanning electron microscope (SEM). Based on the synthesized nanorods, a competitive Schottky diode hydrogen gas sensor is fabricated. Current-Voltage (I-V) characteristics are measured before and after the diode been exposed to hydrogen gas with different concentrations, and it is observed that the ZnO nanorods based Schottky diode show high sensitivity to hydrogen gas as low as 20 ppm H2/air. The dynamic test also indicates a relatively short response and recovery time. Moreover, after a storage in dry box without encapsulation for 6 months, the device still exhibits good hydrogen gas sensing performance.
DescriptionOpen Poster Session: no. 2534
Persistent Identifierhttp://hdl.handle.net/10722/217381

 

DC FieldValueLanguage
dc.contributor.authorLiu, Y-
dc.contributor.authorYu, JCW-
dc.contributor.authorLai, PT-
dc.date.accessioned2015-09-18T05:58:00Z-
dc.date.available2015-09-18T05:58:00Z-
dc.date.issued2014-
dc.identifier.citationThe 13th IEEE Sensors Conference (SENSORS 2014), Valencia, Spain, 2-5 November 2014.-
dc.identifier.urihttp://hdl.handle.net/10722/217381-
dc.descriptionOpen Poster Session: no. 2534-
dc.description.abstractHighly aligned zinc oxide (ZnO) nanorods have been grown on Si substrates by hydrothermal method and characterized with scanning electron microscope (SEM). Based on the synthesized nanorods, a competitive Schottky diode hydrogen gas sensor is fabricated. Current-Voltage (I-V) characteristics are measured before and after the diode been exposed to hydrogen gas with different concentrations, and it is observed that the ZnO nanorods based Schottky diode show high sensitivity to hydrogen gas as low as 20 ppm H2/air. The dynamic test also indicates a relatively short response and recovery time. Moreover, after a storage in dry box without encapsulation for 6 months, the device still exhibits good hydrogen gas sensing performance.-
dc.languageeng-
dc.relation.ispartofIEEE Sensors Conference-
dc.titleHydrothermal synthesis of ZnO nanorods for Schottky diode hydrogen gas sensor-
dc.typeConference_Paper-
dc.identifier.emailYu, JCW: jcwyu@hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.hkuros254221-
dc.customcontrol.immutablesml 151119-

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