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- Publisher Website: 10.1117/12.2022621
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Conference Paper: Flexible transistor active matrix array with all screen-printed electrodes
Title | Flexible transistor active matrix array with all screen-printed electrodes |
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Authors | |
Keywords | Active matrix array DNTT Parylene-C Room temperature Screen-printing |
Issue Date | 2013 |
Publisher | S P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml?WT.svl=mddp2 |
Citation | Conference 8831 - Organic Field-Effect Transistors XII; and Organic Semiconductors in Sensors and Bioelectronics VI, San Diego, California, USA,26-29 August 2013. In Proceedings of SPIE, 2013, v. 8831, p. article no. 883116 How to Cite? |
Abstract | Flexible transistor active matrix array is fabricated on PEN substrate using all screen-printed gate, source and drain electrodes. Parylene-C and DNTT act as gate dielectric layer and semiconductor, respectively. The transistor possesses high mobility (0.33 cm2V-1 s-1), large on/off ratio (< 106) and low leakage current (10 pA). Active matrix array consists of 10×10 transistors were demonstrated. Transistors exhibited average mobility of 0.29 cm2V-1s-1 and on/off ratio larger than 104 in array form. In the transistor array, we achieve 75μm channel length and a size of 2 mm × 2 mm for each element in the array which indicates the current screen-printing method has large potential in large-area circuits and display applications. © 2013 SPIE. |
Persistent Identifier | http://hdl.handle.net/10722/199412 |
ISSN | 2023 SCImago Journal Rankings: 0.152 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Peng, B | en_US |
dc.contributor.author | Lin, JW | en_US |
dc.contributor.author | Chan, KL | en_US |
dc.date.accessioned | 2014-07-22T01:16:45Z | - |
dc.date.available | 2014-07-22T01:16:45Z | - |
dc.date.issued | 2013 | en_US |
dc.identifier.citation | Conference 8831 - Organic Field-Effect Transistors XII; and Organic Semiconductors in Sensors and Bioelectronics VI, San Diego, California, USA,26-29 August 2013. In Proceedings of SPIE, 2013, v. 8831, p. article no. 883116 | en_US |
dc.identifier.issn | 0277-786X | - |
dc.identifier.uri | http://hdl.handle.net/10722/199412 | - |
dc.description.abstract | Flexible transistor active matrix array is fabricated on PEN substrate using all screen-printed gate, source and drain electrodes. Parylene-C and DNTT act as gate dielectric layer and semiconductor, respectively. The transistor possesses high mobility (0.33 cm2V-1 s-1), large on/off ratio (< 106) and low leakage current (10 pA). Active matrix array consists of 10×10 transistors were demonstrated. Transistors exhibited average mobility of 0.29 cm2V-1s-1 and on/off ratio larger than 104 in array form. In the transistor array, we achieve 75μm channel length and a size of 2 mm × 2 mm for each element in the array which indicates the current screen-printing method has large potential in large-area circuits and display applications. © 2013 SPIE. | - |
dc.language | eng | en_US |
dc.publisher | S P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml?WT.svl=mddp2 | - |
dc.relation.ispartof | Proceedings of SPIE - International Society for Optical Engineering | en_US |
dc.rights | Copyright 2013 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited. This article is available online at https://doi.org/10.1117/12.2022621 | - |
dc.subject | Active matrix array | - |
dc.subject | DNTT | - |
dc.subject | Parylene-C | - |
dc.subject | Room temperature | - |
dc.subject | Screen-printing | - |
dc.title | Flexible transistor active matrix array with all screen-printed electrodes | en_US |
dc.type | Conference_Paper | en_US |
dc.identifier.email | Chan, KL: pklc@hku.hk | en_US |
dc.identifier.authority | Chan, KL=rp01532 | en_US |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1117/12.2022621 | - |
dc.identifier.scopus | eid_2-s2.0-84889072013 | - |
dc.identifier.hkuros | 231431 | en_US |
dc.identifier.volume | 8831 | en_US |
dc.identifier.spage | article no. 883116 | en_US |
dc.identifier.epage | article no. 883116 | en_US |
dc.identifier.isi | WOS:000327122500007 | - |
dc.publisher.place | United States | - |
dc.identifier.issnl | 0277-786X | - |